AgNW Transparent Conductive Film Prepared By Scrape Coating And The Influence Of Scraping Coating Process On Its Photoelectric Properties

Silver nanowire materials,possessing the unique properties of both metal materials and nanowire materials,have attracted much attentions in recent years,which can be the most potential materials as a flexible transparent electrode.Compared to the traditional indium tin oxide thin film materials,silver nanowire materials has a variety of advantages,such as low preparation cost,excellent flexibility and mature scale synthesis process of the silver nanowire raw material.Considering the preparation cost,scraping coating method is one of the best choices to prepare the silver nanowire film materials for industrialization,especially the compatibility with roll-to-roll technology for large area preparation.During the scraping process,many factors take significant effects on the morphology,thickness and performance of the film such as the solution concentration,the surface tension,the surface energy of the substrate,the substrate temperature,the slit width between the blade and the substrate,and the scraping speed.Therefore,it is very necessary and important to study the influence of the preparation parameters on the silver nanowire film.In our study,thin silver nanowire films were prepared using the concentration of silver nanowire dispersion of 3 mg/ml,5 mg/ml,7.5 mg/ml,and 10 mg/ml by scraping coating method.It is found that when the concentration of the dispersion liquid is too low,the conductive film cannot be prepared.When the dispersion concentration is too high,the light transmittance of the film is very low.When using the dispersion liquid at a concentration of 5 mg/ml,the transmittance of the film is more than 90%,the sheet resistance is low to 22 Ω/sq.The speed of scraping coating and the slit width between the scraper and the substrate were also studied.The films show good average transparent conductivity,and the sheet resistance of 11 Ω/sq.After optimized the slit width to 40 μm and the speed to 30～50 mm/s,the corresponding film shows best photoelectric performance.