| In recent years,perovskite solar cells(PVSCs)have gradually developed the most promising solar cell technology in the photovoltaic field because of their low cost and high efficiency.The certification power conversion efficiency(PCE)of PVSCs has reached 25.5%,which can compare with commercial silicon solar cells.To obtain high-performance PVSCs devices,numerous research studies have focused on regulating the chemical composition of perovskite and optimizing the charge transporting layers,yet the interfacial mismatch between perovskite and charge transporting layers is a nonnegligible issue that dominates the efficiency and stability of corresponding devices.Nickel oxide(NiOx)nanocrystals as a promising stable hole transporting layer(HTL)in inverted p-i-n PVSCs are less prone to hysteresis and work well with flexible or tandem architectures.However,the easy-agglomeration phenomenon of NiOx nanoparticles(NPs)and adverse interfacial reaction are still the bottleneck for achieving high-performance devices.Therefore,it is urge to solve these issues for performance enhancement and commercialization application of NiOx-based PVSCs.In NiOx-based PVSCs,the detrimental interfacial reaction occurs between Ni3+of NiOxinterface and A-site cation salts.This adverse redox reaction will form Pb I2-rich hole extraction barriers at NiOx/perovskite interface,which is likely to limit hole mobility,resulting in device open-circuit voltage(Voc)loss.Moreover,inconsistent thermal expansion of lattice units in NiOx and perovskite results in tensile strain,prejudicing the microstructure and accelerating the degradation of perovskite.Therefore,interfacial lattice mismatch and adverse reaction are the key issues hindering the development of NiOx-based inverted PVSCs.Herein,a p-chlorobenzenesulfonic acid(CBSA)self-assembled small-molecules(SASMs),is adopted to anchor NiOx and perovskite crystals to endow dual-passivation.The chlorine(-Cl)terminal of SASMs can provide growth sites for perovskite,leading to interfacial strain release.Meanwhile,the sulfonic acid(-SO3H)group from SASMs can passivate surface defects of NiOx conducing to charge carrier extraction.In addition,the self-assembled layer inhibits the adverse interfacial reaction by preventing NiOx contact with perovskite.Therefore,the NiOx/CBSA-based PVSCs obtain the champion PCE of 21.8%.Satisfactorily,the unencapsulated devices can retain above 80%of their initial PCE values after storing in N2 for 3000 h,in air with relative humidity of 50-70%for 1000 h and heating at 85°C for 800 h,respectively.Moreover,the inherent easy-agglomeration phenomenon of NiOx NPs is the key factor for obtaining large-area perovskite films.Herein,a general strategy to synthesize NiOx NPs with high crystallinity and good dispersibility by introducing a NiOx growth template.The imidazolium cation(CnMIm+)with different alkyl chain lengths can be adsorbed on the surface of O2-in NiOx via electrostatic force.Moreover,the hydrogen bond is formed between the H atom of N-H for the imidazole ring and the oxygen atom on O-Ni.Then,the hydrogen bonding network is extended which becomes a template for the growth of NiOx.Furthermore,the presence of ionic liquid not only inhibits the secondary aggregation of NiOx NPs during the dispersion process,but also act as the growth inducement platform for subsequent perovskite growth and enhance the crystal quality of perovskite.Therefore,the PVSCs based on the NiOx-ILs achieve the champion PCE of 21.7%.Overall,this strategy provides the possibility for large-area and high-quality NiOx-based PVSCs. |