Piezoresistive And Temperature Properties Of SnS Two-dimensional Micro/Nano Materials

With the continuous development of emerging information technologies such as big data and cloud computing,higher requirements are put forward for semiconductor devices.Memory devices with high density,low power consumption,short delay time,low cost and high reliability,and real-time sensing sensors with high sensitivity and fast response speed need to be developed to meet the needs of the rapid development of information technology.In this paper,Sn S micro-nano materials with special layered structure were prepared by hydrothermal method and chemical vapor deposition method,and then Sn S-MSM double-ended devices were constructed.The piezoresistive effect,thermal resistance effect,nonvolatile storage performance and real-time sensing function were deeply studied,realize the integrated device with high sensitivity and real-time sensing and erasable nonvolatile storage performance.The results are as follows:(1)The device exhibits a remarkable giant piezoresistive effect(GPZR),and exhibits excellent real-time stress sensing performance for compression and tensile strain.It not only has good sensitivity,fast response,and recovery speed,but also has a GF value of 2100000 under tensile strain.More importantly,due to the existence of numerous bulk defects in the material,they can be used as trap centers for trapping and storing charges.Further,we find that after removing the compressive or tensile strain applied on the device,the traps are emptied due to mechanical excitation,resulting in a significant decrease in the conductivity of the device,and the straininduced HRS can be well maintained for a long time;however,by loading a relatively large bias,the device can return to its original LRS,showing an erasable stress storage effect with a large memory window(more than 10000).Based on this special tin sulfide nanostructure,the device exhibits ultrahigh real-time stress sensing effect and excellent stress storage characteristics.(2)The devices with different resistance states exhibit different thermal resistance effects under the coupling of temperature and bias voltage;under the coupling effect of large bias voltage and temperature,the device with high resistance(HRS)can produce negative thermal resistance effect(NTR),while the device with low resistance(LRS)can produce positive thermal resistance effect(PTR)by using the coupling effect of small bias voltage and temperature.The device was tested in the temperature range of 30°C – 300°C,and the results showed that the device had obvious thermal resistance switching effect at 65°C,and the device also changed from LRS to HRS.Only when the temperature was above 140°C and the reading voltage was below 1 V,the device would show outstanding nonvolatile temperature storage performance.Through the single-end heating of the device,it is found that the I–V curves of the device show overall symmetric changes,and the overall slope of the curve decreases,indicating that when heating the single-end or the whole device,the electrons in the internal trap will be separated from the trap due to thermal excitation,resulting in the change of the overall resistance state of the device,indicating that the change of the resistance state of the device is controlled by the internal body trap of the material.The device has successfully realized the highly sensitive real-time sensing function of temperature and the nonvolatile temperature storage performance that can be repeatedly erased.