| PbZrO3（PZO）based antiferroelectric materials have broad application prospects in the field of pulse power storage devices because of their residual polarization intensity close to zero,unique rectangular energy storage array and good stability due to the AFE-FE phase transition.This paper aims to optimize the microstructure of PZO based composite film through intercalation structure interface design,and then realize the improvement of energy storage performance of PZO under different electric fields.（1）PZO/STO composite film with laminated structure was designed to explore the microstructure evolution process and energy storage performance of the composite film;（2）PZO/PST composite films were prepared,and the microstructure and energy storage properties of the composite films were investigated by adjusting the lamination structure and crystallization temperature of the interfacial layers.The specific research contents of this paper are as follows:（1）PZO/STO antiferroelectric composite film was formed by stacking STO and PZO,the effects of different interfacial layers on the microstructure and electrical properties of composite films were studied.The results show that diffusion between STO layer and PZO layer can occur after STO layer is inserted,which promotes heteronucleation of the film,reduces the grain size,and effectively improves the breakdown field strength of the composite film.With the increase of the number of interface layers,the breakdown field strength of the film increases and the energy storage density increases obviously.When the interface layer increases to N=4,the breakdown field strength of the film reaches 2071 k V/cm,and the effective energy storage density of the film reaches 18.82 J/cm3.（2）PST and PZO were laminated to form PZO/PST composite film,the effects of different interfacial layers on the microstructure and electrical properties of composite films were studied.The results show that the relaxation property of PST film can not only increase the inclination of the hysteresis loop,but also make the hysteresis loop more slender.With the increase of the interface layer,the breakdown field strength increases and the energy storage density increases significantly.When the number of interfacial layers is N=4,the composite film has a maximum breakdown field strength of 2474 k V/cm,and the effective energy storage density of the composite film is 20.67 J/cm3,which is 121.5%higher than that of PZO film.When the number of interfacial layers is N=2,the film energy storage efficiency reaches the maximum value,which is 54.2%.（3）The effects of different annealing temperatures on the microstructure and electrical properties of PZO/PST composite films were studied.The results show that the saturation polarization strength increases and the breakdown field strength increases first and then decreases with the increase of annealing temperature.When the annealing temperature is 650℃,the film has the best energy storage performance.The effective energy storage density and efficiency were 20.67 J/cm3 and 51.19%,respectively. |
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