The Study Of The Self-assembly Stacked H-BN Polycrystal Film Based Resistive Switching

Today,human is standing in a development stage of information explosion.People put forward higher requirements for storage density,storage speed and storage time.In order to improve storage performance,various types of memory are sequentially proposed and the resistive random-access memory（RRAM）is considered as a strong competitor of the new generation of storage devices.In recent years,with the found of2D materials and in order to further reduce device size improving storage density,the2D materials RRAM has been extensive research.However,most 2D materials have disadvantages about low chemical stability and difficult fabrication,which greatly impact 2D materials applied in RRAM.Therefore,it is great meaningful to study the new method for fabricating large area 2D materials film and applying in RRAM is important and has great meaning.In order to solve the problem,the paper report a novel method（liquid phase self-assembly）which is used to fabricate the stacked h-BN polycrystal film and the film was applied in RRAM.its resistive properties were studied by X-ray photoelectron spectroscopy,X-ray diffraction（XRD）,transmission electron microscopy（TEM）and scanning electron microscopy（SEM）.By observing cross section and the change of analyzing the variation of valence state,the resistive principle is analyzed,which provides experimental basis for the research of resistive memory.The main work of this paper is as follows:1.To explore the best parameter of Liquid Phase Self-Assembly.The strong polar organic solvent dimethylformamide（DMF）was used to fabricate suspensions with h-BN.The self-assembly stacked h-BN polycrystal film were formed on liquid surface and translated onto glass substrates by dropping deionized water.The optimal h-BN film forming parameters were obtained by changing the solution concentration,the number of drops,temperature,ultrasonic time and other parameters.The best parameters are standing for 10 min,ultrasonic 5 min and dropping deionized water,all of parameters are obtained by exploring progress.2.To study the influence of electrodes on the stacked h-BN polycrystal film.The ITO,Pt and Al were used to be electrode.The results indicate that the O atom will reduce the on/off ratio and make the stacked h-BN polycrystal film lose non-volatile,when the ITO was used as bottom electrode.The electrochemical metal mechanism basic devices have more stability,in especially,the Al/h-BN/Pt device shows 120 I-V sweeps and on/off ratio of～10².3.To study the influence of annealing on the stacked h-BN polycrystal film.The devices were processed by Vacuum annealing,argon and nitrogen atmosphere annealing and different temperatures.The results indicate that the annealing can make devices easily exhibit the resistive switching,moreover,the device shows the best behavior when the temperature is 400℃.The N₂ will reduce the vacancy in the nitrogen atmosphere annealing.