Study On The UltSasonic Assisted ScSatching And Grinding ChaSacteristics Of Single Crystal SiC

Silicon carbide has excellent mechanical and chemical properties and has been widely used in aerospace,energy vehicles and many other fields.As a typical hard brittle material,silicon carbide also has high hardness,low f Sacture toughness and other difficult-to-machine properties.A large number of studies have shown that the ult Sasonic vib Sation assisted grinding technology can effectively improve the processing efficiency and surface quality of hard and brittle materials.However,there are few studies on the grinding of single crystal silicon carbide materials,and its processing cha Sacteristics still need to be further studied.Therefore,in this paper,single crystal silicon carbide is taken as the research object.Through the combination of ult Sasonic vib Sation assisted scSatching experiment and ult Sasonic vib Sation assisted grinding experiment,the effects of various pa Sameters on single crystal silicon carbide before and after the application of axial ult Sasonic vib Sation are compared,and the ult Sasonic assisted scSatching and grinding cha Sacteristics of single crystal silicon carbide are explored.The main contents of this paper include :(1)The ult Sasonic assisted scSatching experiment was carried out by a pendulum ult Sasonic vib Sation assisted scSatching device with equal depth of cut independently developed by the research group,and the feasibility of the device was verified.The ove Sall design plan of the ult Sasonic assisted scSatching experiment and the ult Sasonic assisted grinding experiment was carried out.(2)Through the single-factor compa Sative experiment of single-point diamond axial ult Sasonic vib Sation assisted scSatching of different crystal planes of single crystal 4H-SiC material,the effects of ult Sasonic amplitude,scSatching speed and scSatching depth on the scSatching force and scSatch morphology of different crystal planes of single crystal 4H-SiC material were compared.The results show that the introduction of axial ult Sasonic vib Sation can effectively reduce the size of scSatch force,and the degree of reduction increases with the increase of amplitude,and decreases with the increase of scSatch depth and scSatch speed.The difference between different crystal faces of single crystal 4H-SiC material is basically not affected by the change of pa Sameters,and the material removal behavior of scSatching Si surface is slightly stronger than that of scSatching C surface in terms of scSatching force and morphology.(3)The effects of ult Sasonic amplitude,grinding wheel linear velocity and grinding depth on the grinding force,surface roughness and surface morphology of different crystal planes of single crystal 4H-SiC material were compared through the single factor cont Sast experiment of axial ult Sasonic vib Sation assisted grinding of different crystal planes of single crystal 4H-SiC material.The results show that the introduction of axial ult Sasonic vib Sation effectively reduces the grinding force and surface roughness,which is conducive to improving the surface quality.The grinding experiment results can be explained and analyzed by the scSatching experiment results.(4)The sub-surface morphology of scSatches was detected.The results show that the energy of high-frequency impact is mainly used to improve the removal Sate of surface materials.At the same time,the application of axial ult Sasonic vib Sation is also conducive to inhibiting the growth of sub-surface cSacks and avoiding the further expansion of damage layer size.