Device Applications On Special Electromagnetic Waves Based On Two Dimensional Materials

In recent years,two-dimensional layered nanomaterials have attracted the attention of researchers in many fields due to their outstanding physical properties.Among them,the unique optoelectronic properties of two-dimensional layered nanomaterials have played an important role in the research and development of new optoelectronic devices and high-performance photodetectors.Nowadays,the research on the interaction be-tween two-dimensional layered nanomaterials and electromagnetic waves in the visible light band and their devices has been relatively mature,but the research on special in-visible electromagnetic waves（ultraviolet,mid-to far-infrared and even terahertz bands）is still in its infancy.In this thesis,based on the research in the visible light band,we mainly explored the interaction mechanism between two-dimensional layered nanomaterials and special waveband electromagnetic waves,and then designed and manufactured a synaptic tran-sistor utilizing ultraviolet light modulation and a terahertz light detector with a high responsivity at room temperature.The main contents are given as follows:1.The mechanism of interaction between ultraviolet light and molybdenum tellu-ride（Mo Te₂）was studied,and the photo-induced doping effect of ultraviolet light on Mo Te₂ was used to design a synaptic transistor based on Mo Te₂/BN heterojunction,and compared it with advantages and disadvantages of the electrical synaptic transistor structure.The device was used to simulate the formation of short-and long-term memory and paired pulses facilitation（PPF）in the brain,and we finally verified the repeatability and long-term stability of stored data.2.The interaction mechanism of low-energy electromagnetic waves,such as te-rahertz light,and Weyl semimetal（Ta Ir Te₄ and WTe₂）was studied.By designing and fabricating antenna electrodes on Weyl semimetal surface,the power of terahertz spot was effectively collected,and highly sensitive terahertz wave detector was realized.The responsibility reached 62.2μW/A at room temperature.