Effect Of TFSA-doped Hole Transport Layer On Perovskite Solar Cell Performance

Third-generation perovskite solar cells（PSCs）have attracted significant attention due to the excellent photoelectric properties of perovskite materials.In the past decade,the power conversion efficiency（PCE）of PSCs has rocketed to certified 25.7%by component regulation,additives engineering and interface modification.To achieve the commercialization of PSCs,their stability and repeatability are still imperfect and need to be further improved.Li-TFSI and4-t BP doped Spiro-OMe TAD is often employed to fabricate high performance PSCs.However,the doped Spiro-OMe TAD in high performance PSCs need to improve the conductivity and optimize the band alignment by exposing to dry air or oxygen which is undesirable to the repeatability of PSCs.Meanwhile,the 4-t BP in Spiro-OMe TAD will drive the de-doping process,which is not conducive to the stability of the device.In this parper,by using acid doping to promote the oxidation of spiro-OMe TAD,PSCs were prepared without being exposed to external oxidation,and the reproducibility of the device was improved.Meanwhile,acid doping can effectively suppress the de-doping effect and improve the stability of PSCs.The specific research contents are as follows:1.Explore different preparation methods to prepare highly efficient PSCs.Experiments were conducted by the control variable method,the differences of devices prepared under different conditions were explored,and the similarities and differences between the reaction process and device performance of devices prepared under different conditions were compared and studied.The annealing conditions and the amount of FAI,MACl and Pb I₂added to the formulation were optimized,and finally PSCs with PCE of 18.5%were prepared by solution method.2.The study of hole transport material with acid as an doping agent was carried out.The reaction of acid to each component material in the hole transport layer not only regulates the cavity mobility of the hole transport film layer,optimizes the work function of the hole transport layer,reduces the hysteresis size from 0.13 to 0.008,improves the transport and extraction of carriers at the interface,and prepares PSCs devices with a photoelectric conversion efficiency of19.73%,which can still maintain the initial efficiency of 80%after 203 days.3.A novel cavity transport layer material based on doped acids explores its role on the interface of perovskite solar cells.The reaction during doping and the effect on the performance and stability of perovskite solar cell devices preliminarily explore the mechanism of reaction between acid and hole transport materials.