Study On Doping Modification Of Lead Zirconate Based Antiferroelectric Ceramics

Pulse power technology has developed into an extremely important part of today’s science and technology field,widely used in defense,civil,medical,high-tech and other fields.Pulse power capacitors with high energy storage density,high energy storage efficiency,good stability,and fast charging and discharging speed are an important part of pulse energy storage technology.Anti ferroelectric materials are considered to be the most potential high power density energy storage dielectric materials due to their high power density and fast discharge speed.Among them,Pb Zr O₃ based antiferroelectric materials have typical antiferroelectric ferroelectric phase transition behavior,rich phase structures,high saturation polarization at room temperature,and small residual polarization,making them an ideal matrix for energy storage antiferroelectric materials.With the development of high power,integration,and miniaturization of devices,further improving the energy storage characteristics of Pb Zr O₃ based antiferroelectrics has been the focus of research in the field of energy storage.As one of the common means to improve the energy storage characteristics of antiferroelectric ceramics,doping modification has been widely used in lead zirconate based materials.Although there are many researches on doping modification of lead zirconate based antiferroelectric ceramics,there is no systematic research on A position The effect of B-site doping ions on the dielectric properties and energy storage characteristics of lead zirconate based antiferroelectric ceramics.Therefore,this article mainly selects low priced monovalent alkali metal ions Li⁺、Na⁺、K⁺and divalent alkaline earth metal ions Ca²⁺、Sr²⁺、Ba²⁺equivalent to Pb²⁺for doping of A-site ions;Doping of B site ions with tetravalent ions Sn⁴⁺、Hf⁴⁺,and high valent ions Nb⁵⁺、Ta⁵⁺and W⁶⁺equivalent to Zr⁴⁺;For trivalent ions with valence values between divalent Pb²⁺and tetravalent Zr⁴⁺,they may either be doped as donor ions at the A site,substituted as acceptors at the B site,or occupy both A and B sites.Therefore,we selected various trivalent lanthanide rare earth elements for research and discussion.The influence of Antiferroelectricity change of doped samples is systematically discussed from the perspective of donor acceptor of substitution at different positions,considering the factor of Ionic radius of doped ions,according to the microstructure analysis of XRD and SEM measured,and combining the measurement results of dielectric temperature spectrum,hysteresis loop and high temperature impedance..In order to further obtain Pb Zr O₃ based antiferroelectric ceramics with high energy storage density and efficiency,based on the study of ion doping at different substitution positions of Pb Zr O₃ based antiferroelectric ceramics,the(Pb_0.9175La_0.055)(Zr_0.975Ti_0.025)O₃（PLZT5.5）component was selected as the research material,and a small amount of glass frit was added as a sintering aid,and isostatic pressing and annealing treatment were performed,The dielectric and energy storage properties of antiferroelectric ceramics composed of PLZT 5.5 at different sintering temperatures were studied.The results showed that after adding glass frit as a sintering aid,the sintering temperature of PLZT 5.5 component antiferroelectric ceramics decreased to1100℃,and the samples were annealed.The polarization strength and energy storage density were both increased by about 10%.Finally,an antiferroelectric ceramic material with excellent energy storage properties,W_re=10.65 J/cm³,η=80.4%was obtained.