Study On Metal Surface Doping Effect Of Two-dimensional TMDs Material And Its Contact Performance With Metal Electrode

Since the discovery of graphene,the whole two-dimensional material system has become a hot topic for scientists,graphene has its unique advantages in mechanics,thermals,electricity and so on,but because the graphene band gap is zero,it is not possible to achieve a high switching ratio transistors and logic devices.The two-dimensional transition metal dichalcogenides（TMDs）with a gap between 1 and 2 e V has a very high switching ratio and is an important application prospect for high-performance logic and optoelectronics in the future.Combining the characteristics of 2D TMDs and their problems in application,the paper focuses on the surface doping of MoTe₂and its vertical heterogeneous junction photoelectric properties,MoS₂ and metal contact properties and their photoelectric properties,the main research content of this paper is as follows:1.The controlled design of TMDs material n-type semiconductor and p-type semiconductor is realized by using In metal surface doping.2.The p-n junction and vertical p-n heterogeneous junction in MoTe₂ are constructed to realize the effective separation of photogenic carriers and improve the efficiency of photoelectric detection.3.The Ohmic contact and Schottky contact electrodes of MoS₂ with metal electrodes can be controlled,and the contact resistance problem with electrodes in MoS₂ device application can be solved,and the optoelectronic detection rate limit of the existing MoS₂devices can be broken on this basis.Through the research of this paper,it is of great significance to apply the two-dimensional TMDs material to logic circuit and photoelectric detection.