Vertical Magnetic Properties Of Rare Earth-Transition GdFeCo Alloy Film And Co₂MnSi/Pt Multilayer Film

In recent years,with the rapid development of information technology,more and more high requirements on storage technology,spin moment transfer magnetic random access memory（STT-MRAM）based on vertical magnetic anisotropy（PMA）magnetic tunnel junction（MTJ）is expected to become a new generation of general purpose memory with high memory density,high speed reading and writing ability and low power consumption.However,there are two types of PMA:bulk effect PMA and interface effect PMA.For example,the rare earth transition metal GdFeCo amorphous film itself has large magnetic anisotropy,low saturation magnetization and high coercivity,and is a good magnetic recording medium;Co₂Mn Si material itself usually has its easy axis in the plane.It can use its interface effect to achieve vertical magnetic anisotropy,and has high spin polarizability and low damping factor.Its anisotropy can reach 10⁶erg/cm³order of magnitude.Therefore,it is of great significance to study their PMA.In this paper,the volume effect vertical magnetic properties and interface effect vertical magnetic properties of rare earth-transition alloy GdFeCo film and Co₂Mn Si/Pt multilayer film are systematically studied.The specific contents are as follows:（1）GdFeCo alloy thin film with PMA was prepared by Mosaic technology,and the effects of sputtering power,working pressure and argon flow rate on the vertical magnetic characteristics of GdFeCo thin film were studied.The results show that by controlling the sputtering rate,working pressure and argon flow rate,the interaction between the Fe Co phase and Gd phase of GdFeCo alloy film is realized,which is consistent with the change of Gd/Fe Co component ratio in the film.In addition,anomalous Hall effect coefficients of10^-8Ω·cm/G are obtained,which are an order of magnitude larger than those in other ferromagnetic films such as[Co,Co Fe/Pt]multilayers^[1]..Therefore,GdFeCo thin films with strong PMA can be prepared by selecting appropriate sputtering parameters,which can provide experimental basis and reference for the design of spinelectronic devices based on GdFeCo thin films.（2）A series of[CMS/Pt]_nmultilayers with strong interface PMA were prepared and the effects of CMS layer thickness,Pt interlayer thickness and the number of cycles on their PMA were studied.The results show that the vertical magnetic anisotropy is closely related to the thickness of each functional layer and the number of cycles of[CMS/Pt]_nmultilayers,and an order of 10⁶erg/cm³,Vertical anisotropy performance of.When the thickness of Pt interlayer is greater than 1.2 nm,CMS thickness has good PMA in the range of 0.3～0.7 nm,and the order of effective vertical anisotropy constant is 10⁶erg/cm³;With the increase of cycle number n,the remanence ratio of the film decreases gradually,indicating that the magnetic inversion of the film changes from single domain to multiple domains.The research results can provide a reliable reference for exploring the next generation of spintronic devices based on CMS/Pt multilayer materials with strong interface PMA.