Keyword [Chemical mechanical polishing] Result: 161 - 180 | Page: 9 of 10 161.  Chemical Mechanical Polishing of Germanium and Indium Phosphide for Microelectronic Applications 162.  Multiscale modeling of the slurry flow and the material removal in chemical mechanical polishing 163.  Novel slurry formulations and associated mechanisms for chemical mechanical polishing of polysilicon, silicon dioxide and silicon nitride films in microelectronic applications 164.  A Study of the Colloidal Stability of Mixed Abrasive Slurries of Silica and Ceria Nanoparticles for Chemical Mechanical Polishing 165.  Characterization of chemical interactions during chemical mechanical polishing (CMP) of copper 166.  Classical molecular dynamics and ab initio simulations of chemical-mechanical polishing of amorphous silica 167.  Study of interfacial interaction during chemical mechanical polishing (CMP) of dielectric silicon dioxide 168.  Modeling of chemical mechanical polishing at multiple scales 169.  Chemical mechanical polishing (CMP) of sapphire 170.  Some chemical and electrochemical aspects of the chemical mechanical polishing of copper 171.  Synthesis and characterization of nanoporous silicon dioxide particulate for low defectivity in low-k dielectric chemical mechanical polishing 172.  Investigation of mechanical aspects of chemical mechanical polishing 173.  An investigation into chemical-mechanical polishing process of zinc selenide 174.  Investigation on Inter-layer Dielectric Processed by Chemical Mechanical Polishing and Spin-on Dielectric for Complementary Metal-oxide-semiconductor Compatible Device 175.  Mechanism of dissolution and planarization of copper/tantalum films during chemical-mechanical polishing 176.  Experiments and mechanistic models for the chemical-mechanical polishing of low dielectric constant polymers and organosilicate glasses 177.  Fundamental studies on silicon dioxide chemical mechanical polishing 178.  Mechanical interactions at the interface of chemical mechanical polishing 179.  Mixed surfactant systems to control dispersion stability in severe environments for enhancing chemical mechanical polishing (CMP) of metal surfaces 180.  Investigating fluid behavior beneath a wafer during chemical mechanical polishing processes   <<First  <Prev  Next>  Last>>  Jump to

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