Epilayers - Globe Thesis

Keyword [Epilayers] Result: 1 - 17 \| Page: 1 of 1
1.	Study Of Defects In AlInN Epilayers And The Effect On Optical And Electrical Properties
2.	Nanoscopic investigation of surface morphology of neural growth cones and indium containing group-III nitrides
3.	Defect structures and growth mechanisms of boron arsenide epilayers grown on 6H-silicon carbide and 15R-silicon carbide substrates
4.	Defects structures in silicon carbide bulk crystals, epilayers and devices
5.	Electrical transport studies of molecular beam epitaxy grown gallium manganese arsenide epilayers and heterostructures
6.	MOCVD growth and characterization of aluminum-rich aluminum nitride/aluminum gallium nitride epilayers and quantum wells
7.	Deep ultraviolet photoluminescence studies of aluminum-rich aluminum gallium nitride and aluminum nitride epilayers and nanostructures
8.	Sublimation growth of aluminum nitride bulk crystals and high-speed CVD growth of silicon carbide epilayers, and their characterization
9.	Defect studies in 4H- Silicon Carbide PVT grown bulk crystals, CVD grown epilayers and devices
10.	Aluminum-rich aluminum gallium nitride alloys and aluminum nitride epilayers
11.	Growth of low basal plane dislocation density epilayers of 4H-silicon carbide for stable bipolar diodes
12.	Optical properties of aluminum gallium nitride alloys and aluminum nitride epilayers
13.	Time-resolved photoluminescence spectroscopy of nitride emitters
14.	Growth Mechanisms and Defect Structures of Boron Arsenide Epilayers Grown on 4H- and 6H-Silicon Carbide Substrates
15.	Optical properties of wide bandgap III-nitride- and zinc oxide-based epilayers, alloys, and heterostructures
16.	Silicon carbide chemical vapor deposition, in situ doping and device fabrication
17.	Defect Characterization in 4H Silicon Carbide Bulk Crystals and Epilayers
<<First <Prev Next> Last>> Jump to