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Keyword [epitaxial films]
Result: 21 - 40 | Page: 2 of 3
21. Preparation Of GdBa2Cu3O7-? Films And Gd2CuO4 Buffer Layers By Chemical Vapor Deposition And Their Structure Investigation
22. Preparation And In-situ Characterization Of Ultra-thin VO2 Epitaxial Films And Exploration On The MIT Phase Transition
23. Strain Engineering And Transport Study On ?-Sn Epitaxial Films
24. Phonon Transport And Manipulation Study In Si1-xGex Epitaxial Films
25. Redox Controllable Switch Of Crystalline Phase And Physical Property In SrVOx Epitaxial Films
26. Study On The Growth And Phase Transition Properties Of Vanadium Dioxide Films Based On Silicon Carbide Substrate
27. Study On The Microstructure And Physical Properties Of Perovskite La2/3Sr1/3MnO3 Thin Films
28. The C-axis Preferential Ca3Co4O9 Material Thermoelectric Transport Properties And Laser-induced Lateral Voltage Effects
29. Synthesis and characterization of barium iron oxide and bismuth iron oxide epitaxial films
30. Low-temperature hot-wire chemical vapor deposition of epitaxial films for large-grained polycrystalline photovoltaic devices
31. Chromium nitride and chromium aluminum nitride epitaxial films for growth of alpha-alumina by AC reactive magnetron sputtering
32. Epitaxial growth and characterization of cobalt-doped zinc oxide and cobalt-doped titanium dioxide for spintronic applications
33. Thin polytype inclusions in 4H silicon carbide epitaxial films and isotope and anharmonic effects in carbon-hydrogen vibrational centers of silicon carbide
34. Thermodynamic modeling of ferroelectric epitaxial films and polarization graded ferroelectrics
35. Reactions of alcohols and organophosphonates on tungsten trioxide epitaxial films
36. Transmission electron microscopy investigation of defects and domains in epitaxial films of Aurivillius and Ruddlesden-Popper phases
37. Atomic structure of surfaces and ultrathin epitaxial films
38. Conducting (silicon-doped) aluminum nitride epitaxial films grown by molecular beam epitaxy: Experiment and theory
39. Fabrication And Properties Study Of Rare-Earth-Doped Ga2O3 Epitaxial Films On Porous GaN Substrates
40. Nb Ion Implantation Improves The Themoelectric Properties Of Rutile TiO2 Epitaxial Films
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