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Keyword [MIS-HEMT]
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1. Study On In-Situ Growth Of Dielectric MIS-HEMT
2. Researches On The Characteristics Of AlGaN/GaN MIS-HENT Power Switching Device
3. Research On Novel Structure Of GaN-on-Si Lateral Power Diode
4. Investigation Of The Interface Between LPCVD-SiN_x Gate Dielectric And Iii-nitride For AlGaN/GaN MIS-HEMTs
5. Study On GaN-based Enhancement-mode MIS-HEMT And E/D-mode Circuits
6. Research On InAs/AlSb High Electron Mobility Transistor And MIS-HEMT
7. Electron Mobility And Ⅰ-Ⅴ Output Characteristics In AlGaN/GaN MOS(MIS)HEMTS
8. Channel Carrier Transport Characteristic Of AlGaN/GaN MIS-HEMT Devices
9. Study On Interface Treatment Technique And The Internal Mechanism For AlGaN/GaN MIS-HEMT
10. Investigation Of Normally-off Recessed-gate AlGaN/GaN MIS-HEMT
11. Characteristics And Reliability Study Of AlGaN/GaN MIS-HEMT Power Switching Devices With MOCVD-in-situ-grown SiN_x Cap Layer
12. Research On The Influence Of Defects On The Reliability Of GaN-based MIS-HEMT
13. Simulation And Fabrication Of GaN Power Device With High-κ Gate Dielectrics
14. Preparation Of Ternary Nitride AlBN Dielectric And Its Application In GaN-HEMTs
15. Study On GaN-based FP-HEMT With High Performance
16. Study Of GaN MIS-HEMT With High-K Dielectric Gate And Its Key Mechanisms
17. Study On Terahertz Gunn Oscillation Of GaN Based MIS-HEMT Devices
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