Material system - Globe Thesis

Keyword [Material system] Result: 21 - 32 \| Page: 2 of 2
21.	MBE-grown wide bandgap II-VI materials for novel devices based on intersubband transitions
22.	Gas-source molecular beam epitaxial growth and characterization of the (aluminum,indium,gallium)nitride phosphide/gallium phosphide material system and its applications to light-emitting diodes
23.	Fabrication of multilayered millimeter wave integrated circuits in a polymer material system
24.	Band-edge optical properties of gallium indium nitride arsenide (antimonide) and the relation to atomic structure
25.	Development of nanoscale optical devices based in indium gallium arsenic phosphide/indium phosphide material system for fiber-optic communications
26.	The monolithic integration of enhancement- and depletion-mode high electron mobility transistors for low-power and high-speed circuit applications in the lattice-matched indium phosphide material system
27.	Investigation of indium arsenide antimonide material system for uncooled long-wavelength infrared photodetector applications
28.	Advancements in the gallium arsenide/nickel aluminum material system and its potential for device applications: Progress towards the realization of a metal base transistor
29.	Numerical simulation of semiconductor light emitters based on the aluminum gallium indium nitride material system and based on novel multiterminal gallium arsenide thyristors
30.	Near- and far-infrared intersubband transitions in polar and non-polar III-nitrides
31.	Intersubband transitions in III-V semiconductors for novel infrared optoelectronic devices
32.	III-V Bismides as a new Heterojunction Material System for Electronic Devices
<<First <Prev Next> Last>> Jump to