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The Subband Structures And Optical Transition For A Few Of Low Dimension Semiconductors

Posted on:1998-05-31Degree:DoctorType:Dissertation
Country:ChinaCandidate:S S LiFull Text:PDF
GTID:1100360185479077Subject:Theoretical Physics
Abstract/Summary:PDF Full Text Request
This report consists of three independent academic papers. The research object of these papers are all part of low dimension semiconductors. Recently, they are the one of the most interested problems in semiconductors. These papers present a series of researches on the subbands of electron and hole, the properties of optical transition, the effects of magnetic field, and et. al for GaAs/GaAlAs T-shaped quantum wires, and InAs/GaAs strained self-assembled coupled quantum dots. Our theoretical results are agreement well with the available experimental data, predict a few of new experimental phenomena, and have some guiding significance on researching and making semiconductor lasers and photodetectors.
Keywords/Search Tags:Quantum wire, Quantum dot, Subband structure, Optical transition
PDF Full Text Request
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