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The Study Of Physical Properties Of Novel Semiconductor Materials By Spectroscopy Methods

Posted on:2008-12-16Degree:DoctorType:Dissertation
Country:ChinaCandidate:J ChenFull Text:PDF
GTID:1100360212476726Subject:Condensed matter physics
Abstract/Summary:PDF Full Text Request
We have studied the basic physical properties such as the lattice vibration and the electron transition, as well as the quality analysis of novel semiconductor materials based on the modern spectroscopy technology. It is well known that semiconductor materials have been widely used in the information industry field, where the fabricated devices have gradually penetrated into and changed human being's life. With the development of research work, the group-III Nitride compound semiconductor materials have representatively revealed great priorities and wide application potentials on blue/green light emitting diodes, lasers, ultraviolet detectors and high frequency/velocity devices. In addition, in the past several years, ternary semiconductor materials such as MgxZn1-xO and Pb1-xSrxSe have also received much attention due to their special application prospects. However, unlike the mature Si/Ge materials and compounds, the above novel materials are still in their initial stages, and many physical properties or parameters of them remain ambiguous. Therefore, the study of these physical properties becomes essential and necessary.Spectroscopy is an important mean to explore the optical attributes of semiconductors. It has been proved to be playing the key role in...
Keywords/Search Tags:Fourier infrared spectroscopy, Raman scattering, synchrotron radiation, phonon mode, electron critical point, disorder of semiconductor materials
PDF Full Text Request
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