Study Of 1D Photonic Crystal With Defect And Temperature Characteristic

In recent years, the theoretical research, structure design and application technology of photonic crystal (PC) have become a hot research topic in the field of photoelectron. It is the major technology to design the structure of photonic crystal which in the optical signal with certain direction or frequency can be forbidden or transmitted. Due to these characteristics, PC has been applied in a wide variety of areas, such as photonic crystal lasers, filter, fiber, polarizer, antennas and laser diode and so on. With the development of the laser technology, passive devices and photoelectric conversion devices, PC gets lots of chance in the field of sensing. Especially, in the sensors'innovation and manufacture aspects, many novel photonic crystal sensors have appeared, such as photonic crystal pressure sensor, temperature sensor, torque sensor and biological sensor etc, which expand the application range of PC. In this dissertation, the temperature properties of several structures of one-dimensional (1D) PC with defect were studied theoretically and practically. The primary content includes:Introducing the propagation model of the electromagnetic wave in PC; analyzing the cause of the production and analyzing methods of the solid band; discussing in detail several methods used to analyze the propagation property of PC; analyzing the influence of the materials and geometry size on propagation property by using the transfer matrix method including both the influence of propagation property of classical 1D PC on the refraction index, the number of periods and the incident angle and the influence of propagation property of 1D PC with defect on the refraction index, the number of the period and the optical depth of the defective layer; studying the propagation property of chirped PC and apodized PC with negative refraction media.As analyzing the propagation property of 1D PC with defect, we expound mainly the proportional relation between the intensity enhancement factor of defective layer and the material refractive index, the quality factor of micro-cavity modulated by defective layer and the proportional relation between the optical quality factor of the resonator and the energy loss of the micro-cavity. Therefore, before experimental manufacture of the 1D PC with defect, many simulation experiments about the propagation property of the three kinds of classical 1D PC with defect have been implemented. These three kinds of classical 1D PC with defect are Si-Si-SiO₂ (the lower refractive index material is SiO₂ and the defective material is Si), Si-SiO₂-SiO₂ (the lower refractive index material and defective material are SiO₂) and Si-Si-Air(the lower refractive index material is air and defective material is Si ). Analyzed the transmission spectrum and reflection spectrum with different periods respectively then we found that on the increase of the number of the periods, the transmittance of resonant peak decrease correspondingly due to the increasing of the light energy loss resulting from the increasing of propagation distance and the tiny change of the band width. For PC with the same materials and periods, the transmittance of resonant peak in the defective mode with higher refractive index is larger compared with it in the defective mode with lower refractive index .This is also due to the larger light energy loss resulting from the larger propagation distance in the defective mode with lower refractive index.In the 1D PC with defect manufacture process, as a result of the micro order of PC's size, We must set a series of marks on chips in order to deal with the location problem of PC during etching at the different time and make the marks be parallel to the waveguide structure in order to place these marks at the initial position of the waveguide structure. During practical etching, marks are many squares made by titanium of 50-nm in thickness witch to Au deposited and the basis of Si stuck well and marks Au must be captured easily under SEM. We manufactured three kinds of 1D PC with defect in the modes of Si-Air which have periods of 6,8,10 respectively. Through the SEM images, we can see that 1D PC with defect structures based on silicon waveguide made by the electron beam lithography technology (EBL) and the induction coupling plasma etching technology (ICP) are very ideal. The good control during the etching process makes the edge of the made PC smooth.According to the resonant cavity theory, the mathematical model of the temperature property of 1D PC with defect was analyzed. On the base of the studies above, we have designed experimental systems based on the temperature property and signal analysis about 1D PC with defect, the experimental model to analyzing the temperature property of PC and compiled the software to collect data, deal with data and analyze spectrum. Applying this system, we carried out experiments with the structures of Si-SiO₂ and Si-Air 1D PC with defect about low and high temperature properties and got the experiment data and transmission spectrum. Compared the experiment data with theory studies, it came to the conclusion that the theory is correct.