Study On Theoretical Calculation Of Optimum Doping Content In Electric Thin Films

Analysis of experimental transparent semiconductor oxide conductive films with various doping levels is presented. The relationship among the physical property, crystal structure, preparation method and doping content was established to be a parabola equation. The extreme value of this equation determines the optimum doping content. The optimum doping content of aluminum-doped zinc oxide films, tin-doped indium oxide films and antimony-doped stannic oxide films determines by this quantitative method agree with the experimental results.In the past, the effects of doping content on the properties of transparent conductive films and the optimum doping content problems, research workers only do experiments according to experiences, then give out some qualitative explanations, and there are never quantitative calculation have been reported. In this paper, a theoretical model is investigated and the expression of optimum doping content is proposed. Optimum doping content in various electric thin films and other functional materials is calculated in this paper.For AZO films prepared by magnetron sputtering method, we can obtain xopt≈2.9894wt%. This value is in accordance with those experimental resultsFor ITO thin films prepared by sol-gel method or reactive evaporation method, we have obtained xopt≈16wt%, it is close to some test results (18wt%). For magnetron sputtering method, we have obtained xopt≈10wt%, which is in accordance with many experimental results. For vacuum evaporation method, we have obtained jopt≈6.25wt%, some experimental results are 5wt%. For CVD method, we have obtained jcopt≈3.52at%. Some experimental results are 2at% or 2wt%.For ATO thin films prepared by sol-gel method, we have obtained xopt≈6.67at%. For magnetron sputtering method, we have obtained xopt≈4.04at%. For vacuum evaporation method, we have obtained xopt≈2.45at%. For CVD method,we have obtained xopt 1.49at%. This value is in accordance with many experimental results (1.5at% or 1.5mol%).Using this expression to calculate the optimum doping content in potassium-doped BaTiO3 nanocrystals, yttrium-doped PZT ferroelectric thin films was given in this paper. The quantitative calculation values are in accordance with the experimental results.Using this expression to calculate the optimum doping content in manganese-doped zinc sulfide nanocrystals, erbium-doped silicon-based photoluminescence materials, the quantitative calculation values are in accordance with the experimental results.The optimum doping content in WO3 electrochromic films, silicon-doped boron carbide semiconductor, Ta5+ optimum doping content in blood compatibility of titanium oxide films, determines by this quantitative method agree with the experimental results. The optimum doping content in zinc-doped tricalcium phosphate artificial bones, bismuth-doped manganese dioxide nano meter materials, optimum doping content in LiNbO, crystals, determines by this quantitative method agree with the experimental results.The theoretical investigation in this paper may be shallow indeed and the results may be discreditable, but that calculation results are in accordance with experimental results may not be occasionally. The problem of optimum doping content must imply some rules undiscovered and the optimum doping content is a very fundamental problem with in almost all the field of research work for material science. The author expects that this paper will be paid attention to, thus real theory of optimum doping content will rise as quickly as possible.