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The Synthesis Of Cubic Boron Nitride By Chemistry Reaction Under High Pressure And High Temperature

Posted on:2007-11-30Degree:DoctorType:Dissertation
Country:ChinaCandidate:Z P SuFull Text:PDF
GTID:1101360212459483Subject:Condensed matter physics
Abstract/Summary:PDF Full Text Request
Cubic boron nitride (cBN) is man-made superhad material only next to diamond in hardness and natural cBN is not discovered up to now. Cubic BN does not react with the ferrous metals and has higher anti-oxidized temperature and good electricity insulation than diamond. Therefore it is an excellent material for machining ferrous metals and alloy in the field of industry. Besides, cBN is the simplest III-V compound semiconductor material. It has the widest energy gap (~6.4eV). Cubic BN can be made easily into both p- and n-type semiconductors with suitable impurity additions. It has higher breakdown potential and good photoelectric properties. As a result, cBN has the obvious superiority in making the high power semiconductor and optoelectronic devices with the excellent properties. However, the perfect cBN crystal is prerequisite no matter where it is applied in the surperhad material or semiconductor material. Therefore,...
Keywords/Search Tags:Temperature
PDF Full Text Request
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