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Study On Low Temperature Sintering Properties Of (Ba, Sr)TiO3 Semiconducting Ceramics

Posted on:2010-09-23Degree:DoctorType:Dissertation
Country:ChinaCandidate:M R KongFull Text:PDF
GTID:1101360302471173Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
Since the effect of positive temperature coefficient of resistivity(PTCR) for BaTiO3 semiconducting ceramics was discovered in 1950s,the PTCR thermistors based on BaTiO3 semiconductive ceramics materials become the third application behind capacitors and piezoelectric ceramic applications and are used widely in communication,household electrical appliances and automobiles sand.However,conventional BaTiO3 ceramic is prepared at high sintering temperature above 1300℃.It is rather difficult to realize co-firing process in fabrication of multilayer PTCR devices.To prepare the multilayer components,the low-temperature sintering technology is very important.In this paper,the BaTiO3 based PTCR ceramics are used as main materials.The aim of this work is to decrease the sintering temperature.PTCR ceramics have been prepared by the conventional solid-state reaction and sol-gel process,a series of works have been done in our study to decrease the sintering temperature.In order to improve PTCR effect of the ceramics sintered at low temperature,the sintering aids and modified sintering aids are added simultaneity.The BaTiO3 based PTCR ceramics are prepared by conventional solid-state reaction. The BaB2O4 sintering aid is synthesized at 1100℃using BaCO3 and H3BO3 powder.The effect of BaB2O4 sintering aid on the microstructure,sintering characters and electric properties of the BaTiO3 based PTCR ceramics are studied.The results indicates that a semiconducting BaTiO3 ceramic with PTCR effect has been obtained at low temperature by adding BaB2O4 as sintering aid and proper amount of BaB2O4 addition helps to promoting low temperature sintering of BaTiO3 ceramics.To decrease the resistivity of PTCR ceramics,the SiO2 is added in BaO-B2O3(BaB2O4) and the effects of BaO-B2O3-SiO2 sintering aid on microstructures and PTCR characteristics of BaTiO3 ceramics are investigated.The results indicate that PTCR ceramics with BaO-B2O3-SiO2 sintering aid adding 5 mol%SiO2 result in the room-temperature resistivity of 210Ω·cm and a resistivity jump about 103 when sintered at 1050℃for 3 h. In order to enhance the PTCR effect of BaTiO3 ceramics sintered at low temperature, Mn is added as acceptor in BaO-B2O3-SiO2 sintering aid.The effects of BaO-B2O3-SiO2-MnO sintering aid on microstructures and PTCR characteristics of BaTiO3 ceramics were investigated.The result indicates that BaO-B2O3-SiO2-MnO2 sintering aid with 0.06 mol%Mn content can provide the room-temperature resistivity 306Ω·cm and resistivity jump 4.23×103.The BaTiO3 nano powder has been synthesized by sol-gel method.The effects of BaB2O4 sintering aid on microstructures and PTCR characteristics of nano-BaTiO3 ceramics have been investigated.The results indicate that nano-BaTiO3 ceramics have high sintering activities and uniform compositions.A semiconducting BaTiO3 ceramic with PTCR effect has been obtained at 1050℃,the room-temperature resistivity 160Ω·cm and resistivity jump 1.45×104.
Keywords/Search Tags:Y doped BaTiO3, PTCR effect, sol-gel method, low temperature sintering, sintering aids
PDF Full Text Request
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