Preparation, Structure And Properties Of The CIGS Thin Films Solar Cells' Materials

Cu(In,Ga)Se₂ (CIGS), with a direct bandgap and a high absorption coefficient, has been recognized as one of the most promising absorber materials for thin films'solar cells. In this paper, electordeposition and printing technology has been used for produced the CIGS thin films, and chemical bath deposition has been employ for prepared the ZnS thin films.The factors which might affect the purity and the microscopy of the product such as potential, concentrate of the electrolyte were discussed in one-step electrodeposition. Smooth and compact CIGS thin films were obtained from one electrolyte bath used the room temperature ionic liquid as solvent.Solvothermal synthesis has been employ to product CuInS₂ and CuInSe₂ nanocrystal, the effect of solvent, reaction tempture, reaction period were dicussed. CuInS₂ powder were synthesis in ethylene glycol at 160℃for 4h in a seal autoclave, it also can be obtained in open-air condition at 195℃for 4h. In₂S₃/CuS core-shell structure powders were prepared by solvothermal in open-air condition. CuIn(S,Se)₂ thin films were prepar by coating the In₂S₃/CuS powder onto substrate by doctor blade technology and sinter at high tempture in Se vapor.The photoelectrochemical properties of the CIGS thin films prepared by electrodeposition and the CuIn(S,Se)₂ thin films abtained from doctor blade technology were chacter by photoelectrochemical cells.