Research On The Noise Performance Mearsurement For Microwave BJT&FET Devices

In this dissertation, the intrinsic noise characteristic parameters for BJT/FET device, which is one of the key factors to reflect the low noise device manufacture technique, is researched. To measuring precisely the parameters, from test point of view, the new extraction arithmetic for the noise parameters in the probe measurement system are proposed. Based on the arithmetic, we try to construct an effective automated test system.Based on the microwave two-port network, the correlation theory, including the relation of the noise two-port network and noiseless two-port network, of the noise correlation matrix and network system matrix, and of the chain noise correlation matrix (CNCM) and noise parameters (i. e., minimum noise figure NF_min, equivalent noise resistance R_n and optimum reflection coefficient (?)_opt), are introduced. Thereinto, the calculation for the CNCM becomes the breakthrough of the noise parameters extractionThe noise measurement for the microwave bipolar transistor (BJT/HBT) and field effect transistor (FET/pHEMT) are researched. To BJT/HBT device, the arithmetic, at its low frequency range and high frequency range respectively, are put forward. As far as the efficiency goes, at the low frequency range, the noise figure measurement isn't required. The noise parameters can be extracted only by using the equivalent circuit, bias condition and E_n-I_n model of the two-port. At high frequency range, the error correcting factors are used in Fukui's intrinsic noise model. After fitting the measured 50 Ω noise figure NF50, correction of Fukui's model is completed. By computing the CNCM, the full noise parameters are extracted. To FET/pHEMT device, Pospieszalski's definition for the noise temperature parameters (i. e., the gate noise temperature T_g and drain noise temperature T_d), is introduced. Based on the noise two-port network theory, linking to Garcia and Lazaros' measurement methods, by fitting the measured 50 Ω noise figure NF₅₀, the linear equation about the T_g and T_d is deduced, and the T_g and T_d are determined by solving the equations at different frequency points. With the new method, both the temperature parameters and the full noise parameters can be obtained.Both BJT/HBT and FET/pHEMT devices are experimented with the new methods...