Preparation And Properties Of Hybrid Nano ZnO/diamond

Diamond and zinc oxide (ZnO) are important wide band semiconductor materials.Recently, the combined structures of ZnO and diamond have been paid more attentiondue to their distinguished chemical and physical properties making it suitable for theapplications such as semiconductor heterojunction, biosensor electrodes and solar celldevices. The main content and innovation of this thesis are listed as following:1．The boron (B)-doped zinc oxide nanorods (ZnO NRs) have been fabricated ondiamond substrate by hydrothermal technique. The mean diameter of the B-dopedZnO NRs is larger than that of the undoped NRs. The results of x-ray diffraction andfirst-principles calculations demonstrate that the boron atoms prefer to occupy theoctahedral interstice positions of ZnO, which lead to the lattice expansion and bandgap shrinkage. The rectifying B-doped ZnO NRs/p-diamond heterojunction structurehas been performed to degrade reactive yellow15solution, showing a highperformance photocatalysis. The photocatalysis mechanism based on the pnheterojunction is discussed.2. The influence of introducing diamond powder on the growth andphotoluminescence of ZnO nanorods are discussed. The majority of ZnO nanorodsshow open-ended feature due to the addition of diamond powder in the reactionsolution. It is speculated that the diamond fell on the top of the growing ZnOnanorods would suppress the (001) growth at the localized positions to form theopen-ended nanorods. The photoluminescence spectra of the ZnO/diamond productsshow the band-edge-related UV emission of ZnO nanorods at~380nm, in addition toa broad visible band centered at about650nm, which may originate from theemissions related to defects in the open-ended ZnO nanorods and/or in the diamond. The open-ended ZnO nanorods and combined ZnO/diamond nanostructures would befavorable for potential applications including UV sensors, electron field emitter, andvarious photoelectric nanodevices.3. The Eu doped zinc oxide nanorods (ZnO NRs) have been fabricated onB-diamond substrate. The tip electric field has been found on the top of ZnO. The Eudoped NRs/diamond heterojunctions are constructed and the electrical properties areexamined. The Eu doped ZnO NR/diamond heterojunctions show typical rectifyingcurrent-voltage behavior.