Preparation And Optical Properties Of Doped ZnO Micro-Nano Structures By Diffusion Doping

ZnO micro-nano structure of superior performance is widely applied to various areas of the new and high-tech field. Acceptor related emissions can be realized by acceptor doping in ZnO materials. So the acceptor doped ZnO materials have attracted much attention. This thesis focuses on the optical properties of acceptor doped ZnO micro-nano structures. It was found that doping by elements Cu, Ag, and N can tune the optical properties of ZnO micro-nano structures. Acceptor related emissions can be observed in the luminesence spectra. The main results are as follows:1. Ag doped ZnO nanorods were prepared by different methods. Ag doped ZnO nanorods and flower like structure were prepared by chemical bath deposition method. Combined the hydrothermal method with the atomic layer deposition technique, ZnO/Ag-ZnO core-shell nanorods were prepared. It was found that the acceptor related emissions were observed in photoluminesce spectra. The calculated acceptor binding energy is about 124 me V.2. The influence of N treatment on the optical properties of Ag doped ZnO nanostructures was investigated. It was found that N treatment could increase the Ag concentration in ZnO films. The Ag-doped ZnO nanorods obtained by diffusion method exhibite good acceptor emission behavior after N treatment.3. The Cu doping ZnO thin films were prepared by sol-gel method. It was found that Cu doping made the absorption edge of ZnO red shift. The acceptor related emissions can be observed in the low-temperature luminescence spectrum.4. By using the theory of diffusion, ZnO/ZnAl2O4 core-shell nanorod arrays were obtained using hydrothermal method, atomic layer deposition method and annealing. The study of optical properties showed that the photoluminescence was related with acceptors. The acceptors mainly come from the Zn vacancies, which were generated when zinc ion diffused to the Al2O3 layer in the annealing process. Calculations result show that the acceptor binding energy is 118 meV.