The Nitrogen-doped P-type ZnO Thin Films And Research Of Related On

Zinc oxide (ZnO) is a direct wide band gap semiconductor material. The bandgapof3.37eV and the exciton binding energy as high as60meV at room temperature (RT)assure the efficient UV exciton emition at room temperature or even highertemperature. Since the light pumped lasing of ZnO was realized for the first time in1997by the scientists from Japan and Hong Kong at room temperature, the ZnOmaterials become the frontier topics fast in the field of international optoelectronicsresearch. However, In order to realize the devices of ZnO, there are still someproblems need to be resolved, The problems as follows were researched in thisdissertation:(1) Heterostructure is an integral part of the photoelectric device. The premise torealize the steep heterostructure of interface is obtained the smooth surfaceepitaxial ZnO thin film. But the limitation of doping at low temperature, thesmoothness of the ZnO thin films growth at low temperature is difficult to meetthe requirements of quantum-well heterostructure.(2) The necessary premise to realize the optoelectronic devices is obtained arepeatable, high quality and low resistivity p-type ZnO thin film, but so far,many researchers reported the p-type ZnO, but the low mobility and lowconcentration of holes of p-type ZnO thin film have been hampering thecontinue development for ZnO in the field of optoelectronics.In order to solve above problems of ZnO, in this paper, we obtained main conclusionsas follows:(1) We used P-MBE equipment, by changing the Zinc/O ratio, controlled Zincsource flow, controlled the growth speed, the growth mode was changed, we obtained high quality epitaxial thin films at low growth temperature, ZnO thinfilms have the atomic smooth surface.(2) NO gas (99.999%) was used as oxygen source and nitrogen source, which wasactivated by rf plasma, N doped p-type ZnO thin films were obtained. And thestability of p-type conductivity was improved through intermittent oxygensupplement in the growth process.(3) Boron was introduced into the chamber by plasma bombarding the boron nitridedischarge tube, B-N codoped ZnO was obtained. The N acceptors concentrationwas increased, and N doped p-type ZnO repetition rate was improved. Halleffect test shows that the holes concentration reaches8.6×1018cm-3, Hallmobility is2.13cm2/Vs, and it displays a stable p-type conductivity during thetwo years preservation period.