Preparation And Performance Of Flexible Conductive Fiber Material Based On Grapheme Oxide

Graphene as one of the thinnest,maximum intensity,highest electric and thermal conductivity new 2D nano materials has attracted wide attention in many fields and has become a hot topic in research.As the Compared to conventional conductive materials,graphene flexible conductive materials have more flexibility and foldability,widely used in supercapacitor,electrode,sensor,wearable electronics etc.Silk fabrics are the most ideal material to preparation gaphene flexible conductive materials for it's close to skin,hygroscopicity and biocompatibility.The incorporation of graphene and silk fibroin(SF)provide a new approach to preparation graphene flexible conductive materials.In this paper,graphene oxide(GO)was synthesized by modification ultraphonic Hummers method.The GO dispersion liquid was prepared for finishing of silk by "dipping-reduction" method,and the GO coated on the surface of silk fabrics reduced to reduction graphene oxide(RGO)to obtained conductive silk fabrics.High concentration GO pastes which have a certain viscosity printed on the surface of silk fabrics to obtained conductive circuit.A highly conductive silk fabric was fabricated by electrostatic self-assembly GO and PANI on the surface of silk fabrics.GO/SF,RGO/SF,GO/PANI/SF and RGO/PANI/SF thin film was prepared by blending GO(or RGO),PANI and silk fibroin.GO/SF,RGO/SF,GO/PANI/SF and RGO/PANI/SF nanofiber membrane was prepared by electrostatic spinning GO(or RGO),PANI and silk fibroin dispersion liquid.Graphene oxide(GO)was synthesized by modification ultraphonic Hummers method.The FTIR,UV-VIS absorption spectrum,SEM,DSC-TG and particle size analysis characterization results showed that this experiment was successfully prepared GO.2g/L GO disperse liquid was used to water-repellency,anti-UV and conductive multifunctional finishing of silk fabrics by "dipping-reduction" method.After one times of "dipping-reduction" the fabric was obtained water-repellency and anti-UV effect,and a surface electric resistance of 3.86K?/cm need 8 times of "dipping-reduction" treatment.In order to simplification the preparation process of graphene conductive silk fabrics,reduce the times of "dipping-reduction",a 15g/L high concentration GO disperse liquid was used to preparation conductive silk fabrics by dipping and padding in-situ reduction method.The surface electric resistance of silk fabric dipping or padding treated for one time by 15g/L GO was 1.37 K?/cm and 1.66 K?/cm,respectively.The results showed that the RGO layer coated on the surface silk fabrics was successive,tight and massy,thus the times of "dipping-reduction" or "padding-reduction" reduced obviously.Printed circuit is an important component for flexible conductive materials,it make GO distribution on the surface of silk according to our needs.A high concentration GO disperse liquid was prepared to GO paste which have a certain viscosity.The direct printing and transfer printing method was used to printed GO on the surface of silk fabrics.The direct printing method is adopting three approaches:(1)GO paste direct printing on the surface of white silk fabrics,the RGO coated silk dyeing with reactive or acid dyes;(2)GO paste direct printing on the surface of pigments dyed silk fabrics;(3)GO paste direct printing on the surface of silk fabrics,then a thermosensitive pigment coating on the surface of RGO layer to obtain a color-changing conductive silk fabrics.The surface electric resistance of silk fabrics decreased to 8.64 K?/cm by GO 50g/L,printing rate 0.8m/min.The transfer printing method firstly printed the high concentration GO paste on the surface of transfer paper,and then the GO transferred from transfer paper to the surface of silk fabrics,the GO reduced to RGO at the same time.The surface electric resistance of silk fabrics decreased to 12.15 K?/cm by GO 50g/L,transfer printing at 220 ? for 120 S.High conductivity is an important factor of flexible conductive textile materials.In order to obtain highly conductive silk fabrics,RGO/PANI composite conductive silk fabrics was prepared by self-assembly RGO and PANI on the surface of silk fabrics with electrostatic force.A low surface electric resistance silk fabric to 0.19 K?/cm was obtained by firstly self-assembly 2g/L GO soulution,then self-assembly 0.025 mol/L aniline.Furthermore,self-assembly number have little effect on conductive of silk fabrics,two times of self-assembly produced a highly conductive silk fabric.PANI deposition on the surface of RGO layer,remedy the ?ditch? of RGO conductive layer,shortened the path of charge transmission,RGO and PANI play a synergistic conductive effect.A washing and rubbing durability RGO/SF or RGO/PANI/SF thin film was prepared by GO(or RGO),PANI and SF.The conductivity and mechanical properties of SF thin film was increased with the increasing of GO and PANI,but too much amount of GO or PANI will decreased the mechanical properties and film forming property of SF thin film.The surface electric resistance of RGO/PANI/SF thin film was decreased to 165.15 K?/cm with RGO 15%,PANI 5%.The conductivity of RGO/PANI/SF thin film was higher than that of RGO/SF,PANI/SF and other ratio RGO/PANI/SF thin film,indicating that RGO and PANI play a synergistic conductive effect.Washing and rubbing durability and flexibility RGO/SF or RGO/PANI/SF nano-fiber thin film was prepared by GO(or RGO),PANI and SF.The spinning property,fiber diameter and distribution of RGO and PANI were explored by SEM.The diameter of the GO/SF fiber was double of pure SF fiber when added 2.5% GO,and the fiber diameter decreased with the increasing of GO percentage composition(above of 2.5%).However,a higher concentration of GO was unfavorable to stable continuous spinning,the GO tend to gather.The diameter of RGO/SF or PANI/SF nano-fiber was increased with the increasing of RGO or PANI percentage composition.The results were attributed to the RGO or PANI hard to dissolve in SF solution,and the RGO or PANI easy to aggregation.Most of the RGO or PANI be covered in the RGO/SF or RGO/PANI/SF nano-fiber thin film,thus leads a poor conductivity.The conductivity of SF nano-fiber thin film was increased after dipping GO soulution.