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Synthesis And Application Of Platinum, Rhodium Metal Organic Compounds For Chemical Vapor Deposition

Posted on:2017-11-25Degree:DoctorType:Dissertation
Country:ChinaCandidate:Y T WangFull Text:PDF
GTID:1312330512462766Subject:Non-ferrous metallurgy
Abstract/Summary:PDF Full Text Request
With the rapid development of aerospace technology, new aerospace engine require work under high temperature.So the engine core components has require not only good high temperature strength and creep rupture strength, but also anti-corrosion, anti-oxidation properties. Usually surface treatment is an important means to improve the work piece anti-oxidation and corrosion resistance properties.Protect film that prepared by MOCVD has good uniformity and reproducibility. The film which prepared by MOCVD with high deposition rate has good adhesion with the base. The film can be deposition on the complex part surface by MOCVD, and people can control the crystal structure and configuration of the surface by adjusting the process parameter. The film that prepared by MOCVD is cheaper in cost than other ways, and the dopisition temperature is lower than other ways. Platinum group metal, with excellent resistance to oxidation and corrosion and high melting point, thermal expansion coefficient of it can well match with substrate, So it has always been a good choice of coating material. So over the past few decades, to preparing Platinum metals film by MOCVD has been a research focuses.The precursors of Platinum metals that is used in preparing Platinum metals film by MOCVD,are very important,and have been attracted the attion of many researchers.Ir ?acac?3 is an excellent precursor in preparing Iridium coating film it has been used in preparing composite Ir/Re which has been the most important component in space craft engines. But the yields of Ir ?acac?3 is very low, So it is neccessary to research the currently method that used to synthesizing Ir?acac?3.In this paper, the correlation between concentration of IrCl3·nH2O NaHC03 Hacac and the Ir?acac?3 yields was researched. And the correlation between the reaction temperature reaction time and the Ir ?acac?3 yields were also researched. Then get the best reaction conditions:Ir???:NaHC03.-Hacac=1:17.4:7 ?molar ratio?; Ir??? concentration 0.187mol/1; the reaction temperature is 90?; reaction time is 2 hours. The properties of Ir ?acac?3 in water were studied in this paper. The mechanism of synthesis Ir ?acac?3 in reaction system was discussed in this paper, and the synthesis process of Ir ?acac?3 has been improved, the total yield of Ir ?acac?3 is up to 60%.In this paper we synthesized MOCVD precursors ?CH3?3PtCp which will be used to prepare platinum coating film that used in turbine blade surface of aircraft engine.Synthesized IPt?Me?3 which is intermediate of ?CH3?3PtCp,and their structures were characterized.Pt?Me?3I is conformed a polymer. The two synthetic processes that have been used to synthesis Pt ?Me?3I were researched. It was found that using methyl lithium as methylation agent to synthesis Pt ?Me?3I is better method than ?CH3?MgI as methylation agent. The optimum conditions that synthesis Pt ?Me?3I by using methyl lithium as methylation agent is K2PtCl6:CH3Li=1:8.2 ?molar ratio?.The synthesis mechanism of Pt ?Me?3I were discussed in this paper.Ir coating film has been prepared by cold wall MOCVD method, and Ir ?acac?3 as precursor. The kinetic model of vapor deposited Ir has been established, and the result that derived from the kinetic model show that the growth rate of Ir coating film is proportional to the partial pressure of H2 but have no relation to the partial pressure of Ir?acac?3CpPt?Me?3 was used to prepare Pt coating film on the nickel-base super alloy by thermal wall MOCVD method. The Pt coating film was prepared on different base material that is candidate materials for deposition chamber wall material, the order of Pt deposition is Al2O3> quartz glass> Cu> CuO> polyimide. We can achieve uniform Pt coating film deposited on nickel-based when:Gasification temperature is 85?, deposition temperature is 140?, Ar flow rate of 100ml/min, H2 flow rate is 40ml/ min. and polvimide is as wall material.
Keywords/Search Tags:Platinum, Iridium, Precursor, Chemical vapor deposition
PDF Full Text Request
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