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Preparation And Optical Properties Control Of Silicate-based Electron-trapping Materials

Posted on:2018-09-08Degree:DoctorType:Dissertation
Country:ChinaCandidate:C ZhangFull Text:PDF
GTID:1318330536488498Subject:Physical Electronics
Abstract/Summary:PDF Full Text Request
Silicate electron trapping phosphors as the environment-friendly materials can last a long time after the removal of excitation.Silicate electron trapping phosphors are stable in chemical stability and thermal stability,good in water-resistant property,cheap in raw materials,and they are widely used for architectural ornament,security or emergency indication system,luminous paint and electrical switchgear.Therefore,silicate phosphors have received extensive attention in recent years.The M2MgSi2O7:Eu2+,R3+?M=Ca,Sr,Ba?silicate electron trapping phosphors were successfully synthesized by high-temperature solid-state reaction in this paper.Systematical study on optimization of preparation technology,implementation of optical tuning,improvement of afterglow property and investigation of afterglow mechanism is mainly conducted in this paper.The main research results of this paper are as follows:1.Electron trapping phosphors M2MgSi2O7:Eu2+,R3+?M=Ca,Sr,Ba?were successfully synthesized.The manufacture process of phosphors is optimized,and the reaction temperature is reduced,so the purity and lattice imperfection are improved and the photoluminescence and afterglow properties are enhanced.In this paper,effects of sintering temperature,flux H3BO3 and SiO2 addition on purity,morphology and structure,photoluminescence and persistence luminescence properties were studied.The research results included the following:?1?The higher sintering temperature can improve crystallization capacity and facilitate activator and auxiliary activator entering into the lattice,the photoluminescence and afterglow properties are improved as sintering temperature rises.?2?The decomposition temperature of flux H3BO3 is 165? and B2O3 which is obtained by thermally decomposing melts at about 450?.A condition of semi-solid flow is formed by the molten B2O3 and the rate of solid state reaction is increased.The proper amount of flux H3BO3 not only can reduce the sintering temperature,but also can facilitate the growth of crystalline grain,so the photoluminescence and afterglow properties are improved with the addition of flux H3BO3.?3?The impurity phases which contain isolate [SiO4]4-silicate anion groups do not disappear as the sintering temperature or the amount of flux H3BO3 rises.However,excess SiO2 not only can enhance the rate of solid-state reaction and reduce the reaction temperature,but also can increase the Si/O ratio in the samples and facilitate the transformation from impurity phases to M2MgSi2O7.Therefore,the photoluminescence properties of samples are improved by adding SiO2 within an appropriate range.2.The color-tunable electron trapping phosphors with different proportions of hosts or differernt luminescent centers were investigated,and the emitting color was tuned by excitation wavelength.The emitting color can vary from bluish purple to white to pale yellow green by adjusting proportions of hosts,doping concentrations of different activators or excitation wavelength.Concrete research content including following several aspects:?1?Sr1.94-xCaxMgSi2O7: Eu2+0.01,Dy3+0.05?x=0,0.388,0.776,1.164,1.552,1.94?were successfully synthesized by high-temperature solid-state reaction under the same sintering temperature?1300??with addition of excess SiO2.The introduction of Ca2+ leads to the decrease of the distance between Eu2+ and ligands and the crystal field strength becomes stronger.Therefore,a red shift?from 468 to 529 nm?phenomenon is observed in the emission spectra.The afterglow emission peaks also change from 466 to 529 nm when the proportion of Ca2+ ions increases in the host.Both luminescence and afterglow colors can continuously vary from blue to green by adjusting the Ca/Sr ratio in the host,and emission wavelength is linear with the concentration of Ca2+?x?.?2?The CaMgSi2O6 phase becomes more and more obvious in the CaxMgSi2Ox+5: Eu2+0.01,Dy3+0.05?x=2,1.6,1.2,1?samples and turns into the dominant phase when the Ca2+?x?content is less than 1.2.The emission band centering at about 449 nm becomes strong and the emission band centering at about 529 nm becomes weak with decreasing concentration of Ca2+?x?.The luminescence colors continuously vary from pale yellow green to bluish purple by adjusting the concentration of Ca2+?x?in the hosts.The luminescence color can change from pale yellow green to white or from white to light purple blue by adjusting excitation wavelengths of x=1.6 sample from 320 to 419 nm,and the sample emits white light with the excitation wavelength in the range of 330-356 nm.The luminescence color of x=1.2 sample can vary from white to light purple blue when excitation wavelength changes from 419 to 349 nm,and the sample emits white light with the excitation wavelength in the range of 397-419 nm.?3?Because the emission band of Ca2MgSi2O7: Eu2+ is located at about 527 nm and emission band of Ca2MgSi2O7: Ce3+ is located at about 400 nm,and the emission peak positions of different luminescent centers keep the same when Ca2MgSi2O7 codoped with Eu2+ and Ce3+,but the luminescent intensity decreases due to the quenching.The luminescence colors vary from pale yellow green to light purple blue by adjusting the concentrations of Eu2+?x?and Ce3+?y?in the Ca2-x-yMgSi2O7: Eu2+x,Ce3+y samples.Moreover,the luminescence color of Ca2-x-yMgSi2O7: Eu2+x,Ce3+y?x=0.01,y=0.01?sample can change from pale yellow green to white,and then change from white to green when excitation wavelength changes from 310 to 370 nm,the sample emits white light with the excitation wavelength in the range of 329-361 nm.The luminescence color of Ca2-x-yMgSi2O7: Eu2+x,Ce3+y?x=0.01,y=0.03?sample can vary from green to light purple blue when excitation wavelength changes from 300 to 370 nm,and the sample emits white light with the excitation wavelength in the range of 320-326 nm and 364-370 nm.3.The effects of assistant activators on long afterglow properties of M2MgSi2O7:Eu2+,R3+?M=Ca,Sr,Ba?were researched to improve the afterglow performance.The results included the following:?1?Because of the shallow traps,the initial afterglow intensity of Ca1.94MgSi2O7: Eu2+0.01,Tm3+0.05 sample is higher than other samples,but the duration of afterglow is shorter.By contrast,the traps of samples Ca1.94MgSi2O7: Eu2+0.01,R3+0.05?R=Dy or Tb?become deeper,and afterglow decay rates become slower and the duration of afterglow become longer.The afterglow performance of Ca1.94MgSi2O7: Eu2+0.01,Nd3+0.05 sample is poor due to the too deep traps.?2?The Sr1.94MgSi2O7: Eu2+0.01,Dy3+0.05 sample has the best afterglow performance.The traps caused by Nd3+ or Ho3+ are shallower than Dy3+,and the duration of afterglow becomes shorter.The traps formed by Er3+ are too deep,the afterglow performance is poor.?3?The trap depths of Nd3+ and Tm3+ in Ba1.94MgSi2O7: Eu2+0.01,R3+0.05?R=Nd,Tm?are suitable for afterglow emission,so the afterglow properties get better than the deep traps caused by Dy3+,and the traps formed by Er3+ are too shallow.4.The afterglow mechanism of M2MgSi2O7: Eu2+,Dy3+?M=Ca,Sr?was studied by first-principle calculation.By comparing the calculational results of the two materials,the possible factors which influence the afterglow performance were obtained.The calculation results included the following:?1?The computed band-gap widths of Sr2MgSi2O7 and Ca2MgSi2O7 are 4.49 eV and 4.465 eV,respectively.?2?The 5d levels of Eu2+ ions in the Sr2MgSi2O7: Eu2+,Dy3+sample are 0.13 e V below the conduction band,and the 5d levels of Eu2+ ions in the Ca2MgSi2O7: Eu2+,Dy3+sample are 0.915 eV up the conduction band by using the scissor correction method.The electrons on 4f levels of Eu2+ ions can be excited into the 5d levels of Eu2+ ions under the radiation of ultraviolet lamp.Because the 5d levels of Eu2+ ions in the M2MgSi2O7: Eu2+,Dy3+?M=Ca,Sr?samples are closer to conduction band,so the excited electrons on 5d levels can easily move to the conduction band.The electrons in conduction band could be trapped by the nearby electron traps and stay for a while.When the trapped electrons return to conduction band,they could back to the 5d levels of Eu2+ ions and move to the 4f levels accompanied by afterglow emission.?3?The electrons in conduction band could easily move to the 5d levels of Eu2+ ions in the Sr2MgSi2O7: Eu2+,Dy3+ sample,because the empty 5d levels are 0.13 eV below the conduction band,and the afterglow property of Sr2MgSi2O7: Eu2+,Dy3+ sample is better.?4?The 4f levels of Dy in Sr2MgSi2O7: Eu2+,Dy3+ sample are distributed with the energy rage of 2.61 eV,and the empty Dy 4f levels are 0.92-2.114 eV below the conduction band by using the scissor correction method.The 4f levels of Dy in Ca2MgSi2O7: Eu2+,Dy3+ sample are distributed with the energy rage of 2.5 eV,and the empty Dy 4f levels are 1.01-2.145 eV below the conduction band by using the scissor correction method.Therefore,Dy 4f levels in the Ca2MgSi2O7: Eu2+,Dy3+ sample are deeper and the afterglow decay rate is slower.
Keywords/Search Tags:M2MgSi2O7:Eu2+,Dy3+?M=Ca,Sr,Ba?, electron trapping materials, high-temperature solid-state reaction, SiO2, photoluminescence, persistence luminescence property
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