| The power density generated by GaN device will go up to 30 to 50W/mm,and the maximum output power of GaN device was over 1kW,in accordance with the fast development of third-generation semiconductor.The combination of high power microwave with solid-state device is available technologyly,the high-efficiency of power combination and the technology of high equivalent radiated power for high power microwave with solid-state device were studied in this paper.The overall design,key subsystem and kernel device for combination of high power microwave with solid-state device were researched firstly in this paper,and the key technologies is proposed,including kW level solid-state device component,high efficiency and compact synthetic array,and high precision beam controlling technique for large array,etc.The simulation results including equivalent radiation power and pointing accuracy of the array antenna were also given specifically,which indicate the relationship of equivalent radiation power and pointing accuracy upon antenna element,solid-state device combination,and synthesized array antenna and phase shifter.High efficiency and compact synthetic array is one of the key technologies for the combination of high power microwave with solid-state device.Epsilon near zero metamaterial was studied and used to increase the antenna aperture efficiency,The details are as follows.Firstly,E-plane horn was designed according to the aperture electric-field diffraction theory with antenna efficiency better than 0.9 over the 8.5 to 10GHz frequency range;Secondly,the period structure of dielectric coating material with epsilon near zero was studied,and the theoretical analysis model of period structure was presented and used to analysis the electromagnetic response.A new dielectric coating material with hollow structure was used for antenna loading based on the principle of antenna aperture phase distribution minimum variance.The experiment results shows that the the aperture efficiency had improved to 0.6 from 0.4 and the relative bandwidth is better than 10%by using epsilon near zero metamaterial.Thirdly,another kind of epsilon near zero metematerial which is composed of a double-layer metallic holes array was studied and used for antenna loading,it shows that the electromagnetic resonance between the two metal plates is the physical mechanism of electric field homogenization and aperture phase distribution modification.An equivalent circuit model of ENZ metamaterial was established by adopting hole coupling theory.The bandwidth property of ENZ metamaterial was analyzed and the method of increasing bandwidth was also proposed.The results shows that the loaded antenna aperture efficiency has improved to0.9 from 0.4 with only 4 cm in axial length,and its relative bandwidth was about 5%,the power capacity was no less than 100kW.The gain of synthetic array was researched when considering antenna coupling in this paper.A optimum array synthesis based on moment method for improving the array gain was proposed and verified by the test.Furthermore,the equivalent radiation power of the 2×2 E-plane horn array with kW level solid-state device component was measured,the result shows that the equivalent radiation power of the array has reached2.5×10~5W,and the feasibility of technique was verified using solid-state device for the combination of high power microwave. |
