| Increasing data transmission speed can satisfy the high internet bandwidth demand. Although high speeds are utilized in the fiber backbone, the cost of InP-based lasers is too expensive for the home user. The addition of nitrogen to InGaAs, forming GaInNAs, reduces the bandgap and lattice parameter simultaneously, enabling low-cost optoelectronic devices on GaAs operating at 1.3 and 1.55 mum. High-quality GaInNAs growth by molecular beam epitaxy has many challenges. Antimony was added as a surfactant and an incorporated species during growth, forming GaInNAsSb, and a dramatic increase in quality was obtained.; GaInNAsSb quantum wells (QWs) have three possible barrier materials. GaAs and GaNAs barriers were used for GaInNAs devices, but GaNAsSb was a new option since antimony was thought to improve all dilute nitrides. Further investigation into the growth parameters, resultant material and optical properties, and band offsets revealed the difficulties of utilizing GaNAsSb for the QW barriers. GaInNAsSb QWs with the three barrier materials were analyzed to determine the advantages and shortcomings of each option. We determined GaAs barriers to be optimal but are more difficult to implement. GaNAs barriers, though not ideal, are the best compromise.; Although antimony was considered a panacea for dilute nitride growth, it did not always improve material, as with GaNAsSb. Investigation of antimony's role and proper utilization was performed. GaInNAs, with lower indium content, has garnered attention for solar cell applications, but high concentrations of defects hinder efficiency. Antimony was added to low-indium GaInNAs in hopes of improving the optical quality. Surprisingly, antimony degraded the optical quality. The different behaviors of antimony with high and low indium concentrations were studied and the role of antimony as a reactive surfactant was confirmed. Although antimony is beneficial in certain situations, minimization of antimony incorporation in GaInNAsSb is a key parameter in improving optical quality.; In conjunction with these findings and several other discoveries, GaInNAsSb (vertical cavity surface emitting lasers) VCSELs at 1.53 mum were grown. These are the longest wavelength, monolithic, GaAs-based VCSELs to our knowledge. In addition, world-record low-threshold and high-power GaInNAsSb edge emitting lasers operating at 1.55 mum were developed. |
