| In this dissertation, the development of one dimensional (1D) InGaAs quantum wires (QWRs) and two dimensional (2D) InGaAs growth have been performed by Molecular Beam Epitaxy (MBE) using unconventional methods.; For the QWRs growth, the GaAs (311)A surface is selected because of its unique step-like surface reconstruction. Three stages (initiation, growth and overgrowth) of InGaAs wire evolution have been investigated. In the first stage, the previously believed InGaAs wire-like structures on GaAs (311)A were confirmed to be real QWRs. The growth mode of the wires was SK growth. The reason for the 1D InGaAs growth on GaAs (311)A, instead of three dimensional (3D) growth, is discussed.; In second stage, the shape of In0.4Ga0.6As wires is assigned as a triangle bounded by two side facets with indices of {lcub}11,5,2{rcub}. The side facet incline angle changes with different growth coverage but was not sensitive to indium composition in deposited material.; In the third stage, 3D InGaAs islands were formed on wires. When indium composition was high, the high built up strain supported islands formation by consuming wetting layer. When InGaAs deposition coverage was high, less accumulated strain in the growth layer led to the dots formation with consuming of the wires.; The growth of wires at different temperatures was also performed. It was found that the length of wires increased as temperature increased. The vertical multilayer stacking growth technique was confirmed to grow longer and more organized InGaAs wires.; Two approaches were explored to achieve 2D growth of InGaAs on GaAs. The first approach was depositing In0.53Ga0.47As, which is lattice matched to InP, on GaAs (100) with an unconventional V/III flux ratio of 2. The As-deficient growing condition suppressed the 3D islands growth. The second approach was depositing InAs on GaAs (111)B vicinal substrate. STM images combined with PL measurement showed that the strain relaxed through ragged step edge formation and Ga-In intermixing for low InAs deposition, and through the formation of step bunching and dislocations for thicker depositions. |
