| This work presents a novel approach to model hole transport in p-channel Metal - Oxide - Semiconductor - Field - Effect - Transistors (MOSFETs). In this approach, a full band Monte Carlo technique has been employed to investigate hole transport and band-structure effects are incorporated by using a six band k.p model, thereby giving an accurate picture of the coupling between the heavy-hole, light-hole and the split-off bands. Carriers in the source and drain regions are treated as quasi-3D like particles while the effect of the confining potential under the gate is included by self-consistently coupling the Poisson, the six band k.p solver and the Monte Carlo transport kernel in the device simulator. All relevant scattering mechanisms were incorporated including acoustic and optical phonon scattering (within the isotropic approximation), surface roughness scattering as well as Coulomb scattering. For the case of the strained SiGe MOSFET, alloy scattering was included in the transport model. Self-consistent device simulation of hole transport in a 25 nm p-charnel Si MOSFET confine the obvious fact of the increasing impact of surface roughness scattering on the device performance at higher gate bias. The performance enhancement expected by using strained SiGe devices in place of conventional Si devices was investigated. The performance enhancement in teens of drive current enhancement was found to be higher at smaller values of drain voltage corresponding to the low field regime in which mobility enhancement is expected for such structures. At higher gate and drain biases, the performance of the strained SiGe MOSFET with respect to the conventional Si MOSFET degrades. The full potential of this approach will be realized when a host of device technologies will be investigated by making relatively minor modifications to the code which will be carried out as part of related work in the future. This will aid in the design and technology aspects of p-channel MOSFETs. |
