m-Plane Homoepitaxy and Equilibrium Crystal Shapes of Gallium Nitride by Hydride Vapor Phase Epitaxy

Nonpolar and semipolar growth of GaN has been shown to offer a promising path for high performance devices. These non-basal plane orientations allow for minimization of the polarization effects seen in c-plane GaN which cause spatial separation of the electron and hole wavefunctions (Quantum Confined Stark Effect). Yet despite the advantages these planes present, there remains consistent problems in both their growth and the lack of substrates. This dissertation focuses on the growth of these nonpolar and semipolar planes, in particular the homoepitaxy of m-plane GaN. The equilibrium crystal shape of GaN and its stable facets were also investigated. It is hoped that with this work, progress is made towards low defect large area nonpolar and semipolar substrates and their improved vapor phase growth.;Work was initially done on m-plane regrowth by hydride vapor phase epitaxy. Extended defect generation, in particular basal plane stacking faults (BPSF), and poor morphology control are consistent problems in m-plane growth. These issues have prevented the expansion and multiplication of m-plane GaN substrates. In this work the effects of carrier gas were investigated on m-plane regrowth. Hydrogen carrier gas was shown to create highly faceted 3D nucleation. These islands had exposed N-face facets which lead to BPSF generation. In contrast, nitrogen carrier gas lead to 2D growth and thus minimized BPSF generation. These stacking faults were then characterized by both reciprocal space mapping and cathodolumienscence where type I1 and I2 faults were observed in the regrown GaN.;Further work was done in exploring the equilibrium crystal shapes of GaN under varying growth conditions. Selective area growth experiments were done on high quality bulk m-plane GaN substrates where GaN facets were exposed to show the stable polar, semipolar and nonpolar planes. From these facets the kinetic Wulff plots for GaN were constructed. This work highlights the stable growth conditions for nonpolar and semipolar GaN and leads to improved growth conditions.;AlN growth by HVPE is also investigated in this dissertation with work being done on thick AlN growth on patterned sapphire substrates (PSS). These templates were made for the purpose of substrates for UV LEDs.