Modeling and simulation of silicon carbide power semiconductor devices

The presence of power semiconductor devices is all-pervasive. They exist in every computer power supply, HVAC systems, audio amplifiers, motor controllers, and countless other electronic systems. As the requirements for power devices increases, the need for better devices becomes more crucial in a world with limited electrical energy production capabilities. Bipolar transistor technology was the only power semiconductor option available in the beginning years of power semiconductor technology. Severe limitations in performance and efficiency led to the design of better transistors employing field effect devices with unipolar and bipolar operation.; This dissertation initiates a study primarily in high power Insulated Gate Bipolar Transistors (IGBT). The dissertation demonstrates through simulation and analysis possible improvements that can be obtained by using silicon carbide (Sic), a high band gap material. Silicon and silicon carbide power IGBT's are simulated using Integrated Systems Engineering's TCAD device simulator DESSIS. Quasistationary and transient simulations were performed and analyzed for a variety of parameter variations.; For the parameter variations studied, Si devices often demonstrated better performance characteristics that the SIC devices. Only a limited number of parameter variations could be studied due to lengthy simulations times involved with a numerical analysis (over 80 hrs for some transient simulations). It should be clearly stated that this study is initial work and not to be considered all encompassing. There may be combinations of geometry, doping, and other variables that would clearly demonstrate the superiority of SIC devices over Si devices in a wide number of applications.