| Silver has been investigated as a potential interconnect material for ultralarge scale integration and devices for displays due to its lower electrical resistivity and high electromigration resistance. However, low thermal stability on silicon dioxide (SiO2) at high temperature due to agglomeration is considered as a drawback for a silver metallization scheme. Therefore, the improvement of the thermal stability of silver metallization is an important issue in the advanced metallization process. In this study, the thermal stability of silver thin film, e.g., agglomeration, is characterized with various analytical techniques and a new method to improve the thermal stability of silver film on SiO2 is proposed.; Titanium aluminide thin films are being considered as potential conductors, diffusion barriers for high temperature electronics, and thermal barriers for flexible substrates applications due to their high melting points and high oxidation resistance. In this study, Ti37Al63 and Ti53Al47 thin films are deposited onto SiO2 substrates by radio frequency magnetron sputtering using compound targets and then annealed in a vacuum to investigate the properties of the films. Also, barrier properties of TiAlxNyOz films between electron-beam evaporated copper thin films and thermally grown SiO 2 substrates are investigated.; A flexible display has been attractive for the display of mobile electronics due to its lightweight and unbreakable properties compared with the display using glass. An active matrix display uses the thin film transistors containing amorphous or polycrystalline silicon layer as an active layer of a transistor. In this study, reviews of flexible substrates and a potential display device, organic light-emitting diode (OLED). |
