Growth and characterization of cadmium sulfide on indium phosphide using an RF atomic source and cadmium sulfide effusion cell

InP provides the best lattice matched substrate for cadmium sulfide (0.63%). In our research, growth of CdS on InP (001) substrates is conducted using two different methods of molecular beam epitaxy (MBE). First, RF atomic source assisted growth, in which Cd is deposited from an effusion cell while sulfur is supplied from ionized hydrogen sulfide gas using an RF atomic source. An RF atomic source induces intense plasma in the pyrolytic boron nitride (PBN) crucible, resulting in the dissociation of H2S into H and S ions. The plasma intensity and emitted photon spectrum are monitored through a view port by a photodiode connected to a digital oscilloscope. Second, deposition is carried out using CdS sublimation from solid a CdS powder evaporation source. Both methods are carried out using an MBE system manufactured by Vacuum Generators (V80H). InP (001) substrate cleaning is performed prior to introduce to vacuum chamber.; CdS layers were investigated by RHEED for film structure, atomic force microscopy (AFM) was use for surface morphology. Auger electro micro scopy (AES) was used for atomic concentration and film thickness. PL and X-ray diffraction system was used for film structure and crystallite size.