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Characterization of tin crystal orientation evolution during thermal cycling in lead-free solder joints

Posted on:2013-12-26Degree:Ph.DType:Dissertation
University:Michigan State UniversityCandidate:Zhou, BiteFull Text:PDF
GTID:1451390008985569Subject:Chemistry
Abstract/Summary:
To address the long term reliability of lead-free solder joints in electronic devices during thermal cycling, the fundamental understanding of deformation mechanisms was studied using polarized light optical microscopy (PLM), electron backscatter diffraction (EBSD) in scanning electron microscopy (SEM), and synchrotron X-ray diffraction (XRD). Near-eutectic Sn-3.0(wt %) Ag-0.5(wt %) Cu (SAC305) lead-free solder joints were assessed in three different package designs: low-strain plastic ball grid array (PBGA), medium-strain fine-pitch ball grid array (BGA), and high-strain wafer-level-chip-scale package (WLCSP). The effect of microstructure evolution on solder failure is correlated with dislocation slip activities.;The major failure mode in lead-free solder joints during thermal cycling that causes the electrical failure of the device is cracking in the bulk Sn near the Si chip/solder interface. Microstructure and Sn grain orientation evolution usually precedes crack development. A combined approach of both statistical analysis of a large number of solder joints, and detailed studies of individual solder balls was used to investigate the causes of fracture. Sn crystal orientation evolution and its effect on deformation was characterized in solder joints with different thermal histories, and compared with those from other package designs with different effective strain levels. The relationship between the initial dominant and localized recrystallized Sn grain orientations on crack development was investigated. It is found that in the low-strain package design, cracking is strongly correlated with Sn grain orientations with the [001] direction (c-axis) nearly aligned with the chip/solder interface. But no cracks were observed in solder balls with dominant orientations that have the c-axis normal to the interface plane.;In higher-strain packages, however, cracking occurred in a variety of Sn grain orientations, and even solder balls with dominant orientations that are resistant to fracture in the low-strain package design cracked. Nevertheless, at the early stage of deformation in WLCSP samples, more dramatic plastic deformation and damage was observed in a row of solder balls with similar c-axis orientations (with the [001] direction nearly aligned with the interface plane).;Microstructure evolution preceding crack propagation is apparent in all package designs. Both continuous and discontinuous recrystallization processes were observed in solder joints after thermal cycling. More significant microstructure evolution and recrystallization occurred in higher strain package designs. Statistical analysis reveals that there is an increase in the number of high energy high angle grain boundaries and a decrease of low energy low angle and twin boundaries during thermal cycling. Crack propagation was facilitated by the high angle random boundaries developed during recrystallization, whereas the twin boundaries (with near 60° misorientation about the Sn [100] axis) were more resistant to cracking. The relative ease of the deformation of different Sn grain orientations also influenced crack development. Crack propagation was impeded by the hard orientations (with c -axis normal to the interface) that developed during continuous recrystallization.;The gradual lattice rotation during the continuous recrystallization process is correlated with dislocation slip on facile slip systems. Local concentration of elastic strain and orientation gradients inside a continuously recrystallized grain are correlated with slip activities, and locally recovered regions may become nucleation sites for the primary recrystallization upon further straining.
Keywords/Search Tags:Solder joints, Thermal cycling, Orientation evolution, Sn grain orientations, Recrystallization, Package designs, Correlated, Slip
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