| The silicidation of 10 nm thick transition metal alloyed nickel thin-films is studied employing atom-probe tomography and synchrotron grazing incidence x-ray diffraction.;The three-dimensional nanoscale distribution of M (M = Pt or Pd) atoms after silicidation of a solid-solution Ni0.95M0.05 thin-film on Si(100) is studied to explore their role in the morphological and phase stabilization of nickel monosilicide thin-films. Both Pt and Pd segregate at the (Ni1-xMx)Si/Si(100) heterophase interface, the driving force for which is the reduction in the interfacial Gibbs free energy. This may be responsible for the increased resistance of (Ni1-xM x)Si thin-films to agglomeration, and consequently an enhanced temperature window for application.;The temporal evolution of Ni silicide phase-formation and the simultaneous redistribution of Pt during silicidation of a 10 nm thick Ni0.95Pt 0.05 film on Si(100) is also investigated. The Ni2Si phase forms in the as-deposited thin-films, followed by other nickel-rich phases Ni3Si2 and Ni31Si12 after rapid-thermal annealing at 280-320°C. At a higher annealing temperature, the NiSi phase nucleates and grows outward from the silicide/Si(100) interface by consuming the nickel-rich silicide phases. The chemical root-mean-square roughness of the nickel-silicide/silicon interface, based on a silicon isoconcentration surface, decreases with the formation of the NiSi phase during silicidation. Pt redistribution is not only affected by the simultaneous reaction between Ni and Si during this reactive diffusion process, but also influences the resulting microstructure and thermal stability of the NiSi phase. Pt short-circuit diffusion via grain boundaries, Harrison regime-B, of (Ni0.99Pt 0.01)Si is observed. It underscores the importance of interfacial phenomena for stabilizing this low-resistivity phase, providing insights into the modification of NiSi texture, grain size, and morphology caused by Pt.;The redistribution of arsenic dopant atoms in silicon during silicidation of a 10 nm thick Ni0.95Pt0.05 thin-film after implantation of 3.5x1015 cm-2 As+ ions is studied. The As atom distribution is significantly affected by the migration of the nickel silicide growth front at 280°C. After rapid-thermal annealing at 550°C for 30 s, As atoms segregate at the NiSi/Si(100) interface. A partial radial distribution function centered on As atoms indicates very short-range clustering of As in the nickel silicide thin-film. |
