Cryogenic behavior of insulated gate bipolar transistors (IGBTs)

The Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device able to manage high power and to operate at high frequency. The great development of the Insulated Gate Bipolar Transistor (IGBT) characteristics in the recent years has made IGBT a dominating semiconductor device in the middle-high power application field. Due to the increasing use of superconductors in major areas of power systems and power electronics, it is of interest to consider the possibility of using IGBTs at the cryogenic temperatures of operation of superconductor materials. A comprehensive study of the behavior of IGBTs at temperatures from 4.2 K to 300 K will be presented.; The study includes both Non Punch Through and Punch Through structure. A comparison of the performances of the two structures is presented.; Simulations results of a properly modified physics-based IGBT model for circuit simulation are presented and validated by comparison with the experimental data.