| A fabrication process was developed to make an aluminum nitride/4H-silicon carbide metal insulator semiconductor field effect transistor (MISFET). The MISFET made was a circular depletion mode device. The channel thickness was 2.5 um of silicon carbide doped p-type to approximately 1 × 10 16 cm−3 on a semi insulating 4H-SiC substrate with a 600A layer of aluminum nitride as the gate dielectric.; The measured threshold voltage taken from the draincurrent to gate voltage curve was determined to be −1 V. The metal-semiconductor work function and interface charg were determined to be −3.05 ev and 2.13 × 1012 C/cm2, respectively. By using values from the linear region of the drain characteristics, the mobility for the MISFET was calculated to be 10.95 cm2/V-s.; Also the intrinsic parameters for the MISFET were determined. The intrinsic transconductance was determined to be 5 uA/V, the drain to source conductance 46 ua/V, the output capacitance 320 fF, and the cut off frequency 2.65 Mhz. |
