Chemical vapor deposition modeling in a non-confined circular impinging jet reactor at atmospheric pressure

A numerical/computational model and the associated FORTRAN computer code have been developed to simulate chemical vapor deposition processes. The computation of the deposition rate on the wafer surface is very sensitive to the number of control volumes inside the boundary layer. It has also been found that the silane inlet mass fraction does not have a significant effect on the deposition rate. An investigation of the significance of the Soret effect on the silicon deposition from silane in a hydrogen carrier gas was performed. The results showed that small changes in the deposition rates, along with the very small thermal diffusion ratios, result in the Soret effect being negligible for this reactor configuration over a wide range of silane inlet concentrations and wafer surface temperatures at atmospheric pressure.