| Dopant segregation in crystal growth results in nonuniform dopant distributions and hence nonuniform physical properties in the resultant crystals. Three different methods in vertical Bridgman crystal and one method in horizontal Bridgman crystal growth were developed to reduce dopant segregation in Bridgman crystal growth. A replenishing melt of a proper composition was supplied at a proper rate with suppression of dopant back diffusion. This allowed the composition of the growth melt and hence the composition of the growing crystal to remain constant. Crystal of uniform compositions were grown, including LiNO{dollar}sb3{dollar}-doped NaNO{dollar}sb3,{dollar} KNO{dollar}sb3{dollar}-doped NaNO{dollar}sb3,{dollar} Cd-doped InSb and Cd{dollar}sb{lcub}rm 1-x{rcub}{dollar}Zn{dollar}sb{lcub}rm x{rcub}{dollar}Te. |
