| The technologically important reaction of Cl;At high temperatures (;The presence of intentionally prepared surface defects (Si-Si dimer vacancies) leads to an increase of the Cl saturation coverage, the development of an additional low temperature etching channel, and Cl;The desorption of pairs of chlorine atoms influenced by the tip of a scanning tunneling microscope was achieved at preselected sites on the Cl-saturated Si(100)-;It was found that on an atomic scale, the dissociative adsorption of Cl2 molecules on the Si(100) surface at room temperature is dominated by the configuration with two Cl atoms bound on two neighboring dimers rather than on the thermodynamically preferred configuration with two Cl atoms on a single dimer. Upon saturation by Cl, every surface Si atom forms one Si-Cl bond.;The depletion of Cl coverage upon irradiation by 266 nm laser pulses shows a strong dependence on surface temperature and is indicative of a thermally activated process. |
