| A novel doping technique using metalorganic chemical vapor deposition (MOCVD) was investigated for thin film electroluminescent device (TFELD) processing. Tri(carbonylcyclopentadienyl-manganese or TCMn, was used as the doping source for luminescent centers. Different from a conventional flux modulation technique, a temperature and flow modulation (TFM) technique was developed to optimize both the ZnS growth and Mn-doping. The effects of layer thickness, doping level, dopant distribution, and growth/doping temperatures on electroluminescent characteristics were investigated by controlling both the doping temperature and TCMn flow rate.;From electron microscopy results, the characteristics of undoped ZnS films, such as growth rate of 1-3 ;The TFM technique showed the capability to engineer the TFELD characteristics by modulating the doping level and dopant distribution and to reduce the minimum phosphor thickness required for high brightness and, therefore to reduce the TFELD threshold voltage. |
