Numerical study of heat transfer and fluid flow for steady crystal growth in a vertical Bridgman device

The study of heat transfer and fluid flow in a vertical Bridgman device is motivated by current industrial difficulties in growing crystals with as few defects as possible. For example, Gallium Arsenide (GaAs) is of great interest to the semiconductor industry but remains an uneconomical alternative to silicon because of the manufacturing problems.; This dissertation is a two dimensional study of the fluid in an idealized Bridgman device. The model nonlinear PDEs are discretized using second order finite differencing. Newton's method solves the resulting nonlinear discrete equations. The large sparse linear systems involving the Jacobian are solved iteratively using the Generalized Minimum Residual method (GMRES). By adapting fast direct solvers for elliptic equations with simple boundary conditions, a good preconditioner is developed which is essential for GMRES to converge quickly.; Trends of the fluid flow and heat transfer for typical ranges of the physical parameters are determined. Also, the size of the terms in the mathematical model are found by numerical investigation, in order to find what terms are in balance as the physical parameters vary. The results suggest the plausibility of simpler asymptotic solutions.