Chemical bath deposition of II-VI compound thin films

II-VI compounds are direct bandgap semiconductors with great potentials in optoelectronic applications. Solar cells, where these materials are in greater demand, require a low cost production technology that will make the final product more affordable. Chemical bath deposition (CBD) a low cost growth technique capable of producing good quality thin film semiconductors over large area and at low temperature then becomes a suitable technology of choice.; Heterogeneous reaction in a basic aqueous solution that is responsible for the II-VI compound film growth in CBD requires a metal complex. We have identified the stability constant (k) of the metal complex compatible with CBD growth mechanism to be about 106.9. This value is low enough to ensure that the substrate adsorbed complex relax for subsequent reaction with the chalcogen precursor to take place. It is also high enough to minimize the metal ion concentration in the bath participating in the precipitation of the bulk compounds. Homogeneous reaction that leads to precipitation in the reaction bath takes place because the solubility products of bulk II-VI compounds are very low. This reaction quickly depletes the bath of reactants, limit the film thickness, and degrade the film quality. While ZnS thin films are still hard to grow by CBD because of lack of suitable complexing agent, the homogeneous reaction still limits quality and thickness of both US and ZnS thin films.; In this study, the zinc tetraammine complex ([Zn(NH₃) ₄]2+) with k = 108.9 has been forced to acquire its unsaturated form [Zn(NH₃)₃]2+ with a moderate k = 106.6 using hydrazine and nitrilotriacetate ion as complementary complexing agents and we have successfully grown ZnS thin films. We have also, minimized or eliminated the homogeneous reaction by using ammonium salt as a buffer and chemical bath with low reactant concentrations. These have allowed us to increase the saturation thickness of ZnS thin film by about 400% and raise that of US film form 0.2 to 0.5 μm with improved quality.; A novel chemical activated diffusion of Cd into ZnS thin film at temperature lower than 100°C is also developed. This in conjunction with thermal activated diffusion at 400°C has enabled us to synthesize Cd_1−xZn _xS thin films suitable for solar cells from CBD grown CdS/ZnS multilayer.; The potential application of the new Cd_1−xZn_xS/CdS/CdTe solar cell structure is also demonstrated. The unoptimized structure grown on transparent conducting oxide coated soda lime glass of 3mm thickness with no antireflection coating yielded a 10% efficiency. This efficiency is the highest ever recorded in any Cd_1−xZn_xS film containing CdTe solar cells.