| We investigate the electronic properties of the top junction in hydrogenated amorphous silicon solar cells. In-situ Kelvin probe method is employed to reveal the contact potential profile of the transparent conductive oxide/p+ a-Si,C:H, and p+ a-Si,C:H/a-Si:H interfaces. The films are deposited by dc reactive magnetron sputtering of a silicon target in a plasma of (Ar + H;The electrostatic potential of the p;The chemical reduction of SnO;Atomic H treatment leads to ZnO reduction which enhances the potential barrier at ZnO/p... |
