Characterization of structural and electronic properties of nanoscale semiconductor device structures using cross-sectional scanning probe microscopy

Scanning probe microscopy (SPM) offers numerous advantages over metrology tools traditionally used for semiconductor materials and device characterization including high lateral spatial resolution, and relative ease of use. Cross-sectional SPM allows material and device measurements including layer thickness metrology and p-n junction delineation on actual nanoscale device structures. Site-specific SPM allows measurements to be performed on modern devices with real, non-arbitrary geometries including deep-submicron Si device structures.; In Chapter II we present theoretical analysis and experimental results of capacitive force microscopy studies of Al_xGa_1-xAs/GaAs heterojunction bipolar transistor structures. The contrast obtained yields clear delineation of individual device layers based on doping, and enables a precise determination of the difference in basewidth between the two HBT samples examined. We experimentally determine a charged surface state density on the GaAs {lcub}110{rcub} surface that is consistent with published values.; In Chapter III we present cross-sectional scanning capacitance microscopy (SCM) of nanoscale group IV Si device structures. Sample preparation techniques are discussed in context with recent experimental results from the literature. We then presented a theoretical calculation of the flat-band and threshold voltage of Si-MOSFETs as a function of doping including error analysis due to oxide thickness variations. Application to nanoscale FIB implanted Si is presented. The SCM contrast evolves as a function of applied bias as expected based on theoretical modeling of the tip-sample system as an MOS-capacitor.; In Chapter IV we apply cross-sectional SCM to directly measure the electronic properties of a 120 nm gate length p-MOSFET including super-halo implants. Bias-dependent SCM images allow us to delineate the individual device regions and image the n+ super-halo implants. We have demonstrated the specific SCM bias conditions necessary for imaging the super-halo implants and have shown data indicating clear asymmetry in the individual lobes. Based on detailed analysis of our SCM data we have measured an apparent channel length, L_app, to be 73 ± 11 nm. Detailed analysis indicates that the measured L_app is independent of V_dc.